Abstract
Methods for determining desired doping conditions for a semiconducting single-walled carbon nanotube (s-SWCNT) are provided. One exemplary method includes doping each of a plurality of s-SWCNT networks under a respective set of doping conditions; determining a thermoelectric (TE) power factor as a function of a fractional bleach of an absorption spectrum for the plurality of s-SWCNT networks doped under the respective sets of doping conditions; and using the function to identify one of the TE power factors within a range of the fractional bleach of the absorption spectrum. The identified TE power factor corresponds to the desired doping conditions.
Original language | American English |
---|---|
Patent number | 11,796,488 B2 |
Filing date | 24/10/23 |
State | Published - 2023 |
NREL Publication Number
- NREL/PT-5K00-87889
Keywords
- charge-transfer dopant
- doping conditions
- semiconducting single-walled carbon nanotube (s-SWCNT)
- TE power factor