Abstract
We report on scanning spreading resistance microscopy on cross sections of thin-film CdTe devices. The results show the capability of identifying the multiple layers, the depletion region, and the nonuniform doping. We observe carrier injection and depletion region movement by laser illumination or by electrically biasing the device, directly revealing the underlying physics of the solar cell junction in real space with resolutions of nanometer scale.
Original language | American English |
---|---|
Article number | 6939652 |
Pages (from-to) | 395-400 |
Number of pages | 6 |
Journal | IEEE Journal of Photovoltaics |
Volume | 5 |
Issue number | 1 |
DOIs | |
State | Published - 2015 |
Bibliographical note
Publisher Copyright:© 2014 IEEE.
NREL Publication Number
- NREL/JA-5K00-63069
Keywords
- CdTe
- microelectrical property
- scanning spreading resistance microscopy (SRRM)
- solar cell junction
- Thin-film PV