Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells

Darius Kuciauskas; David Albin; John Moseley; Siming Li; Patrik Šcajev; Carey Reich; Amit Munshi; Adam Danielson; Walajabad Sampath; Chungho Lee

doi:10.1109/PVSC45281.2020.9300915

Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells

Darius Kuciauskas, David Albin, John Moseley, Siming Li, Patrik Šcajev, Carey Reich, Amit Munshi, Adam Danielson, Walajabad Sampath, Chungho Lee

Research output: Contribution to conference › Paper › peer-review

12 Scopus Citations

Abstract

We report significant advances in understanding and reducing nonradiative Shockley-Read-Hall recombination in polycrystalline CdSexTe1-x, leading to microsecond charge carrier lifetimes. In undoped Al2O3-passivated heterostructures we find external radiative efficiency 0.2%, quasi-Fermi level splitting 950 mV, mobility 100 cm2/(Vs), and diffusion length 14 µm. In solar cells measured lifetimes can exceed 1 µs. We interpret this data to indicate MgZnO/CdSeTe interface recombination velocity <100 cm/s. Based on our results, it appears CdTe PV technology has potentially overcome longstanding 'recombination lifetime' limitation and in the near future will transition to improving other aspects of device design.

Original language	American English
Pages	82-84
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300915 https://doi.org/10.1109/PVSC45281.2020.9300915
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

NREL/CP-5900-76895

Keywords

CdTe
charge carrier lifetime
photoluminescence
recombination
solar cells
thin film

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Kuciauskas, D., Albin, D., Moseley, J., Li, S., Šcajev, P., Reich, C., Munshi, A., Danielson, A., Sampath, W., & Lee, C. (2020). Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells. 82-84. Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada. https://doi.org/10.1109/PVSC45281.2020.9300915, https://doi.org/10.1109/PVSC45281.2020.9300915

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abstract = "We report significant advances in understanding and reducing nonradiative Shockley-Read-Hall recombination in polycrystalline CdSexTe1-x, leading to microsecond charge carrier lifetimes. In undoped Al2O3-passivated heterostructures we find external radiative efficiency 0.2%, quasi-Fermi level splitting 950 mV, mobility 100 cm2/(Vs), and diffusion length 14 µm. In solar cells measured lifetimes can exceed 1 µs. We interpret this data to indicate MgZnO/CdSeTe interface recombination velocity <100 cm/s. Based on our results, it appears CdTe PV technology has potentially overcome longstanding 'recombination lifetime' limitation and in the near future will transition to improving other aspects of device design.",

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Kuciauskas, D, Albin, D, Moseley, J, Li, S, Šcajev, P, Reich, C, Munshi, A, Danielson, A, Sampath, W & Lee, C 2020, 'Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells', Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 15/06/20 - 21/08/20 pp. 82-84. https://doi.org/10.1109/PVSC45281.2020.9300915, https://doi.org/10.1109/PVSC45281.2020.9300915

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T1 - Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells

AU - Kuciauskas, Darius

AU - Albin, David

AU - Moseley, John

AU - Li, Siming

AU - Šcajev, Patrik

AU - Reich, Carey

AU - Munshi, Amit

AU - Danielson, Adam

AU - Sampath, Walajabad

AU - Lee, Chungho

PY - 2020/6/14

Y1 - 2020/6/14

N2 - We report significant advances in understanding and reducing nonradiative Shockley-Read-Hall recombination in polycrystalline CdSexTe1-x, leading to microsecond charge carrier lifetimes. In undoped Al2O3-passivated heterostructures we find external radiative efficiency 0.2%, quasi-Fermi level splitting 950 mV, mobility 100 cm2/(Vs), and diffusion length 14 µm. In solar cells measured lifetimes can exceed 1 µs. We interpret this data to indicate MgZnO/CdSeTe interface recombination velocity <100 cm/s. Based on our results, it appears CdTe PV technology has potentially overcome longstanding 'recombination lifetime' limitation and in the near future will transition to improving other aspects of device design.

AB - We report significant advances in understanding and reducing nonradiative Shockley-Read-Hall recombination in polycrystalline CdSexTe1-x, leading to microsecond charge carrier lifetimes. In undoped Al2O3-passivated heterostructures we find external radiative efficiency 0.2%, quasi-Fermi level splitting 950 mV, mobility 100 cm2/(Vs), and diffusion length 14 µm. In solar cells measured lifetimes can exceed 1 µs. We interpret this data to indicate MgZnO/CdSeTe interface recombination velocity <100 cm/s. Based on our results, it appears CdTe PV technology has potentially overcome longstanding 'recombination lifetime' limitation and in the near future will transition to improving other aspects of device design.

KW - CdTe

KW - charge carrier lifetime

KW - photoluminescence

KW - recombination

KW - solar cells

KW - thin film

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U2 - 10.1109/PVSC45281.2020.9300915

DO - 10.1109/PVSC45281.2020.9300915

M3 - Paper

AN - SCOPUS:85099588191

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EP - 84

T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Y2 - 15 June 2020 through 21 August 2020

ER -

Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells

Abstract

Conference

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Keywords

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