Abstract
We report significant advances in understanding and reducing nonradiative Shockley-Read-Hall recombination in polycrystalline CdSexTe1-x, leading to microsecond charge carrier lifetimes. In undoped Al2O3-passivated heterostructures we find external radiative efficiency 0.2%, quasi-Fermi level splitting 950 mV, mobility 100 cm2/(Vs), and diffusion length 14 µm. In solar cells measured lifetimes can exceed 1 µs. We interpret this data to indicate MgZnO/CdSeTe interface recombination velocity <100 cm/s. Based on our results, it appears CdTe PV technology has potentially overcome longstanding 'recombination lifetime' limitation and in the near future will transition to improving other aspects of device design.
| Original language | American English |
|---|---|
| Pages | 82-84 |
| Number of pages | 3 |
| DOIs | |
| State | Published - 14 Jun 2020 |
| Event | 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020 |
Conference
| Conference | 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 |
|---|---|
| Country/Territory | Canada |
| City | Calgary |
| Period | 15/06/20 → 21/08/20 |
Bibliographical note
Publisher Copyright:© 2020 IEEE.
NLR Publication Number
- NREL/CP-5900-76895
Keywords
- CdTe
- charge carrier lifetime
- photoluminescence
- recombination
- solar cells
- thin film