Microstructural Properties of Cu(In,Ga)Se2 Thin Films Used In High Efficiency Devices

F. S. Hasoon, Y. Yan, H. Althani, K. M. Jones, H. R. Moutinho, J. Alleman, M. M. Al-Jassim, R. Noufi

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51 Scopus Citations


Thin-film polycrystalline photovoltaic devices based on Cu(In,Ga)Se2 have a demonstrated efficiency approaching 19%. The best performance was achieved when the Ga/In + Ga ratio was in the 25-30% range. The short-circuit current density exhibited for the device containing CdS was almost at its expected maximum. The open-circuit voltage was relatively low considering the optical bandgap (Eg) of the above absorber (∼ 1.15 eV); at best, it is 0.6 × Eg. In this work, we examined the microstructural properties, e.g. defects due to misorientation, micro-twinning, stacking faults, and dislocations, for films prepared by our 'three-stage' process, including the CIGS and Mo back-contact. We also attempted to make a correlation between the above observations and device performance.

Original languageAmerican English
Pages (from-to)1-5
Number of pages5
JournalThin Solid Films
Issue number1-2
StatePublished - 2001

NREL Publication Number

  • NREL/JA-520-28775


  • Cu(In,Ga)Se
  • Device performance
  • Microstructural properties


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