Microstructural Properties of Cu(In,Ga)Se2 Thin Films Used In High Efficiency Devices

F. S. Hasoon; Y. Yan; H. Althani; K. M. Jones; H. R. Moutinho; J. Alleman; M. M. Al-Jassim; R. Noufi

doi:10.1016/S0040-6090(00)01724-7

Microstructural Properties of Cu(In,Ga)Se2 Thin Films Used In High Efficiency Devices

F. S. Hasoon, Y. Yan, H. Althani, K. M. Jones, H. R. Moutinho, J. Alleman, M. M. Al-Jassim, R. Noufi

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

51 Scopus Citations

Abstract

Thin-film polycrystalline photovoltaic devices based on Cu(In,Ga)Se₂ have a demonstrated efficiency approaching 19%. The best performance was achieved when the Ga/In + Ga ratio was in the 25-30% range. The short-circuit current density exhibited for the device containing CdS was almost at its expected maximum. The open-circuit voltage was relatively low considering the optical bandgap (Eg) of the above absorber (∼ 1.15 eV); at best, it is 0.6 × Eg. In this work, we examined the microstructural properties, e.g. defects due to misorientation, micro-twinning, stacking faults, and dislocations, for films prepared by our 'three-stage' process, including the CIGS and Mo back-contact. We also attempted to make a correlation between the above observations and device performance.

Original language	American English
Pages (from-to)	1-5
Number of pages	5
Journal	Thin Solid Films
Volume	387
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)01724-7 https://doi.org/10.1016/S0040-6090(00)01724-7
State	Published - 2001

NREL Publication Number

NREL/JA-520-28775

Keywords

Cu(In,Ga)Se
Device performance
Microstructural properties

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@article{fff7ce4abb2f494ba073401b9aaad6fb,

title = "Microstructural Properties of Cu(In,Ga)Se2 Thin Films Used In High Efficiency Devices",

abstract = "Thin-film polycrystalline photovoltaic devices based on Cu(In,Ga)Se2 have a demonstrated efficiency approaching 19%. The best performance was achieved when the Ga/In + Ga ratio was in the 25-30% range. The short-circuit current density exhibited for the device containing CdS was almost at its expected maximum. The open-circuit voltage was relatively low considering the optical bandgap (Eg) of the above absorber (∼ 1.15 eV); at best, it is 0.6 × Eg. In this work, we examined the microstructural properties, e.g. defects due to misorientation, micro-twinning, stacking faults, and dislocations, for films prepared by our 'three-stage' process, including the CIGS and Mo back-contact. We also attempted to make a correlation between the above observations and device performance.",

keywords = "Cu(In,Ga)Se, Device performance, Microstructural properties",

author = "Hasoon, {F. S.} and Y. Yan and H. Althani and Jones, {K. M.} and Moutinho, {H. R.} and J. Alleman and Al-Jassim, {M. M.} and R. Noufi",

year = "2001",

doi = "10.1016/S0040-6090(00)01724-7",

language = "American English",

volume = "387",

pages = "1--5",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Microstructural Properties of Cu(In,Ga)Se2 Thin Films Used In High Efficiency Devices

AU - Hasoon, F. S.

AU - Yan, Y.

AU - Althani, H.

AU - Jones, K. M.

AU - Moutinho, H. R.

AU - Alleman, J.

AU - Al-Jassim, M. M.

AU - Noufi, R.

PY - 2001

Y1 - 2001

N2 - Thin-film polycrystalline photovoltaic devices based on Cu(In,Ga)Se2 have a demonstrated efficiency approaching 19%. The best performance was achieved when the Ga/In + Ga ratio was in the 25-30% range. The short-circuit current density exhibited for the device containing CdS was almost at its expected maximum. The open-circuit voltage was relatively low considering the optical bandgap (Eg) of the above absorber (∼ 1.15 eV); at best, it is 0.6 × Eg. In this work, we examined the microstructural properties, e.g. defects due to misorientation, micro-twinning, stacking faults, and dislocations, for films prepared by our 'three-stage' process, including the CIGS and Mo back-contact. We also attempted to make a correlation between the above observations and device performance.

AB - Thin-film polycrystalline photovoltaic devices based on Cu(In,Ga)Se2 have a demonstrated efficiency approaching 19%. The best performance was achieved when the Ga/In + Ga ratio was in the 25-30% range. The short-circuit current density exhibited for the device containing CdS was almost at its expected maximum. The open-circuit voltage was relatively low considering the optical bandgap (Eg) of the above absorber (∼ 1.15 eV); at best, it is 0.6 × Eg. In this work, we examined the microstructural properties, e.g. defects due to misorientation, micro-twinning, stacking faults, and dislocations, for films prepared by our 'three-stage' process, including the CIGS and Mo back-contact. We also attempted to make a correlation between the above observations and device performance.

KW - Cu(In,Ga)Se

KW - Device performance

KW - Microstructural properties

UR - http://www.scopus.com/inward/record.url?scp=0035967539&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(00)01724-7

DO - 10.1016/S0040-6090(00)01724-7

M3 - Article

AN - SCOPUS:0035967539

SN - 0040-6090

VL - 387

SP - 1

EP - 5

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Microstructural Properties of Cu(In,Ga)Se2 Thin Films Used In High Efficiency Devices

Abstract

NREL Publication Number

Keywords

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