Microstructural Properties of the Surface of Cu(In,Ga)Se2 Thin Films

F. S. Hasoon, Y. Yan, K. M. Jones, H. Althani, J. Alleman, M. M. Al-Jassim, R. Noufi

Research output: Contribution to conferencePaperpeer-review

5 Scopus Citations

Abstract

We examine the micro-structural properties, e.g. defects due to misorientation, and dislocations, for CIGS films prepared by our "3-stage process." We found using TEM & EDS that the composition and certain structural properties of the surface region are different from the bulk. Specifically, we observe high density of dislocations in a plane parallel to the surface, a distance of 150 to 250 nm. The extent of the dislocation network seems to correlate with the performance of devices based on these films.

Original languageAmerican English
Pages513-516
Number of pages4
DOIs
StatePublished - 2000
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: 15 Sep 200022 Sep 2000

Conference

Conference28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/TerritoryUnited States
CityAnchorage
Period15/09/0022/09/00

Bibliographical note

Publisher Copyright:
© 2000 IEEE.

NREL Publication Number

  • NREL/CP-520-28945

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