Abstract
We examine the micro-structural properties, e.g. defects due to misorientation, and dislocations, for CIGS films prepared by our "3-stage process." We found using TEM & EDS that the composition and certain structural properties of the surface region are different from the bulk. Specifically, we observe high density of dislocations in a plane parallel to the surface, a distance of 150 to 250 nm. The extent of the dislocation network seems to correlate with the performance of devices based on these films.
Original language | American English |
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Pages | 513-516 |
Number of pages | 4 |
DOIs | |
State | Published - 2000 |
Event | 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: 15 Sep 2000 → 22 Sep 2000 |
Conference
Conference | 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 |
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Country/Territory | United States |
City | Anchorage |
Period | 15/09/00 → 22/09/00 |
Bibliographical note
Publisher Copyright:© 2000 IEEE.
NREL Publication Number
- NREL/CP-520-28945