Microstructural Properties of the Surface of Cu(In,Ga)Se2 Thin Films

F. S. Hasoon; Y. Yan; K. M. Jones; H. Althani; J. Alleman; M. M. Al-Jassim; R. Noufi

doi:10.1109/PVSC.2000.915884

Microstructural Properties of the Surface of Cu(In,Ga)Se2 Thin Films

F. S. Hasoon
, Y. Yan
, K. M. Jones
, H. Althani
, J. Alleman
, M. M. Al-Jassim
, R. Noufi

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

We examine the micro-structural properties, e.g. defects due to misorientation, and dislocations, for CIGS films prepared by our "3-stage process." We found using TEM & EDS that the composition and certain structural properties of the surface region are different from the bulk. Specifically, we observe high density of dislocations in a plane parallel to the surface, a distance of 150 to 250 nm. The extent of the dislocation network seems to correlate with the performance of devices based on these films.

Original language	American English
Pages	513-516
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2000.915884
State	Published - 2000
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: 15 Sep 2000 → 22 Sep 2000

Conference

Conference	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	15/09/00 → 22/09/00

Bibliographical note

Publisher Copyright:
© 2000 IEEE.

NLR Publication Number

NREL/CP-520-28945

Access to Document

10.1109/PVSC.2000.915884

Cite this

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title = "Microstructural Properties of the Surface of Cu(In,Ga)Se2 Thin Films",

abstract = "We examine the micro-structural properties, e.g. defects due to misorientation, and dislocations, for CIGS films prepared by our {"}3-stage process.{"} We found using TEM \& EDS that the composition and certain structural properties of the surface region are different from the bulk. Specifically, we observe high density of dislocations in a plane parallel to the surface, a distance of 150 to 250 nm. The extent of the dislocation network seems to correlate with the performance of devices based on these films.",

author = "Hasoon, \{F. S.\} and Y. Yan and Jones, \{K. M.\} and H. Althani and J. Alleman and Al-Jassim, \{M. M.\} and R. Noufi",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 ; Conference date: 15-09-2000 Through 22-09-2000",

year = "2000",

doi = "10.1109/PVSC.2000.915884",

language = "American English",

pages = "513--516",

}

TY - CONF

T1 - Microstructural Properties of the Surface of Cu(In,Ga)Se2 Thin Films

AU - Hasoon, F. S.

AU - Yan, Y.

AU - Jones, K. M.

AU - Althani, H.

AU - Alleman, J.

AU - Al-Jassim, M. M.

AU - Noufi, R.

PY - 2000

Y1 - 2000

N2 - We examine the micro-structural properties, e.g. defects due to misorientation, and dislocations, for CIGS films prepared by our "3-stage process." We found using TEM & EDS that the composition and certain structural properties of the surface region are different from the bulk. Specifically, we observe high density of dislocations in a plane parallel to the surface, a distance of 150 to 250 nm. The extent of the dislocation network seems to correlate with the performance of devices based on these films.

AB - We examine the micro-structural properties, e.g. defects due to misorientation, and dislocations, for CIGS films prepared by our "3-stage process." We found using TEM & EDS that the composition and certain structural properties of the surface region are different from the bulk. Specifically, we observe high density of dislocations in a plane parallel to the surface, a distance of 150 to 250 nm. The extent of the dislocation network seems to correlate with the performance of devices based on these films.

UR - https://www.scopus.com/pages/publications/84949560824

U2 - 10.1109/PVSC.2000.915884

DO - 10.1109/PVSC.2000.915884

M3 - Paper

AN - SCOPUS:84949560824

SP - 513

EP - 516

T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000

Y2 - 15 September 2000 through 22 September 2000

ER -

Microstructural Properties of the Surface of Cu(In,Ga)Se2 Thin Films

Abstract

Conference

Bibliographical note

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