Microstructure and Domain Configurations in Ferroelectric PbTiO3 and Pb(Zr,Ti)O3 Thin Films

Jane G. Zhu, M. M. Al-Jassim, Maria Huffman

Research output: Contribution to journalArticlepeer-review

6 Scopus Citations


Ferroelectric domain configurations in PbTiO3 and Pb(ZrxT1-x)O3 (PZT, x = 0.3 or 0.5) thin films have been studied by transmission electron microscopy. The PbTiOg and PZT thin films have been deposited by the ionized cluster beam technique and radio frequency sputtering, respectively. The grain size in these thin films is typically less than 0.5 μm. Lamellar 90°-domain features have been observed in both PbTiO3 and PZT (30/70) samples. The domain walls correspond to the {011} twin boundaries. La-doping and Ca-modification are shown to affect the microstructure of the PZT films. No clear domain feature occurs in the PZT thin film that has composition near the morphotropic phase boundary. The effects of grain sizes are briefly discussed.

Original languageAmerican English
Pages (from-to)885-891
Number of pages7
JournalJournal of Electronic Materials
Issue number7
StatePublished - Jul 1995

NREL Publication Number

  • ACNR/JA-412-13963


  • Domain configurations
  • ferroelectric PbTiO
  • Pb(Zr,Ti)O
  • thin films


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