Microstructure and Domain Configurations in Ferroelectric PbTiO3 and Pb(Zr,Ti)O3 Thin Films

Jane G. Zhu; M. M. Al-Jassim; Maria Huffman

doi:10.1007/BF02653337

Microstructure and Domain Configurations in Ferroelectric PbTiO3 and Pb(Zr,Ti)O3 Thin Films

Jane G. Zhu, M. M. Al-Jassim, Maria Huffman

Materials Science

Research output: Contribution to journal › Article › peer-review

6 Scopus Citations

Abstract

Ferroelectric domain configurations in PbTiO₃ and Pb(Zr_xT_1-x)O₃ (PZT, x = 0.3 or 0.5) thin films have been studied by transmission electron microscopy. The PbTiOg and PZT thin films have been deposited by the ionized cluster beam technique and radio frequency sputtering, respectively. The grain size in these thin films is typically less than 0.5 μm. Lamellar 90°-domain features have been observed in both PbTiO₃ and PZT (30/70) samples. The domain walls correspond to the {011} twin boundaries. La-doping and Ca-modification are shown to affect the microstructure of the PZT films. No clear domain feature occurs in the PZT thin film that has composition near the morphotropic phase boundary. The effects of grain sizes are briefly discussed.

Original language	American English
Pages (from-to)	885-891
Number of pages	7
Journal	Journal of Electronic Materials
Volume	24
Issue number	7
DOIs	https://doi.org/10.1007/BF02653337 https://doi.org/10.1007/BF02653337
State	Published - Jul 1995

NREL Publication Number

ACNR/JA-412-13963

Keywords

Domain configurations
ferroelectric PbTiO
Pb(Zr,Ti)O
thin films

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title = "Microstructure and Domain Configurations in Ferroelectric PbTiO3 and Pb(Zr,Ti)O3 Thin Films",

abstract = "Ferroelectric domain configurations in PbTiO3 and Pb(ZrxT1-x)O3 (PZT, x = 0.3 or 0.5) thin films have been studied by transmission electron microscopy. The PbTiOg and PZT thin films have been deposited by the ionized cluster beam technique and radio frequency sputtering, respectively. The grain size in these thin films is typically less than 0.5 μm. Lamellar 90°-domain features have been observed in both PbTiO3 and PZT (30/70) samples. The domain walls correspond to the {011} twin boundaries. La-doping and Ca-modification are shown to affect the microstructure of the PZT films. No clear domain feature occurs in the PZT thin film that has composition near the morphotropic phase boundary. The effects of grain sizes are briefly discussed.",

keywords = "Domain configurations, ferroelectric PbTiO, Pb(Zr,Ti)O, thin films",

author = "Zhu, {Jane G.} and Al-Jassim, {M. M.} and Maria Huffman",

year = "1995",

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doi = "10.1007/BF02653337",

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pages = "885--891",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Microstructure and Domain Configurations in Ferroelectric PbTiO3 and Pb(Zr,Ti)O3 Thin Films

AU - Zhu, Jane G.

AU - Al-Jassim, M. M.

AU - Huffman, Maria

PY - 1995/7

Y1 - 1995/7

N2 - Ferroelectric domain configurations in PbTiO3 and Pb(ZrxT1-x)O3 (PZT, x = 0.3 or 0.5) thin films have been studied by transmission electron microscopy. The PbTiOg and PZT thin films have been deposited by the ionized cluster beam technique and radio frequency sputtering, respectively. The grain size in these thin films is typically less than 0.5 μm. Lamellar 90°-domain features have been observed in both PbTiO3 and PZT (30/70) samples. The domain walls correspond to the {011} twin boundaries. La-doping and Ca-modification are shown to affect the microstructure of the PZT films. No clear domain feature occurs in the PZT thin film that has composition near the morphotropic phase boundary. The effects of grain sizes are briefly discussed.

AB - Ferroelectric domain configurations in PbTiO3 and Pb(ZrxT1-x)O3 (PZT, x = 0.3 or 0.5) thin films have been studied by transmission electron microscopy. The PbTiOg and PZT thin films have been deposited by the ionized cluster beam technique and radio frequency sputtering, respectively. The grain size in these thin films is typically less than 0.5 μm. Lamellar 90°-domain features have been observed in both PbTiO3 and PZT (30/70) samples. The domain walls correspond to the {011} twin boundaries. La-doping and Ca-modification are shown to affect the microstructure of the PZT films. No clear domain feature occurs in the PZT thin film that has composition near the morphotropic phase boundary. The effects of grain sizes are briefly discussed.

KW - Domain configurations

KW - ferroelectric PbTiO

KW - Pb(Zr,Ti)O

KW - thin films

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U2 - 10.1007/BF02653337

DO - 10.1007/BF02653337

M3 - Article

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VL - 24

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Microstructure and Domain Configurations in Ferroelectric PbTiO3 and Pb(Zr,Ti)O3 Thin Films

Abstract

NREL Publication Number

Keywords

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