Microstructure Evolution and Effect on Resistivity for Cu Nanointerconnects and Beyond

Laura Spinella, Szu-Tung Hu, Linjun Cao, Paul Ho

Research output: Contribution to conferencePaper

4 Scopus Citations


In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the scaling effect on resistivity. The scaling effect on microstructure of Cu interconnects was analyzed to the 24 nm linewidth for the 14 nm node using a high-resolution TEM precession microdiffraction technique. The TEM study was supplemented by a Monte Carlo simulation to investigate grain growth in nanointerconnects based on local energy minimization. The scaling effect on electrical resistivity was analyzed for Cu, Ru and Co nanointerconnects, taking into account the contributions from surface and grain boundary scatterings. The results for Cu and Co are consistent with recent experiments.
Original languageAmerican English
Number of pages3
StatePublished - 2019
Event2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, California
Duration: 1 Dec 20185 Dec 2018


Conference2018 IEEE International Electron Devices Meeting (IEDM)
CitySan Francisco, California

NREL Publication Number

  • NREL/CP-5K00-73455


  • Cu nanointerconnects
  • microstructure
  • resistivity
  • scaling effects


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