Microstructure Evolution and Effect on Resistivity for Cu Nanointerconnects and Beyond

Laura Spinella; Szu-Tung Hu; Linjun Cao; Paul Ho

doi:10.1109/IEDM.2018.8614547

Microstructure Evolution and Effect on Resistivity for Cu Nanointerconnects and Beyond

Laura Spinella, Szu-Tung Hu, Linjun Cao, Paul Ho

Materials Science

Research output: Contribution to conference › Paper

4 Scopus Citations

Abstract

In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the scaling effect on resistivity. The scaling effect on microstructure of Cu interconnects was analyzed to the 24 nm linewidth for the 14 nm node using a high-resolution TEM precession microdiffraction technique. The TEM study was supplemented by a Monte Carlo simulation to investigate grain growth in nanointerconnects based on local energy minimization. The scaling effect on electrical resistivity was analyzed for Cu, Ru and Co nanointerconnects, taking into account the contributions from surface and grain boundary scatterings. The results for Cu and Co are consistent with recent experiments.

Original language	American English
Number of pages	3
DOIs	https://doi.org/10.1109/IEDM.2018.8614547
State	Published - 2019
Event	2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, California Duration: 1 Dec 2018 → 5 Dec 2018

Conference

Conference	2018 IEEE International Electron Devices Meeting (IEDM)
City	San Francisco, California
Period	1/12/18 → 5/12/18

NREL Publication Number

NREL/CP-5K00-73455

Keywords

Cu nanointerconnects
microstructure
resistivity
scaling effects

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10.1109/IEDM.2018.8614547

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@conference{0d1ded1b1e9244b0955799c9bd4f1a79,

title = "Microstructure Evolution and Effect on Resistivity for Cu Nanointerconnects and Beyond",

abstract = "In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the scaling effect on resistivity. The scaling effect on microstructure of Cu interconnects was analyzed to the 24 nm linewidth for the 14 nm node using a high-resolution TEM precession microdiffraction technique. The TEM study was supplemented by a Monte Carlo simulation to investigate grain growth in nanointerconnects based on local energy minimization. The scaling effect on electrical resistivity was analyzed for Cu, Ru and Co nanointerconnects, taking into account the contributions from surface and grain boundary scatterings. The results for Cu and Co are consistent with recent experiments.",

keywords = "Cu nanointerconnects, microstructure, resistivity, scaling effects",

author = "Laura Spinella and Szu-Tung Hu and Linjun Cao and Paul Ho",

year = "2019",

doi = "10.1109/IEDM.2018.8614547",

language = "American English",

note = "2018 IEEE International Electron Devices Meeting (IEDM) ; Conference date: 01-12-2018 Through 05-12-2018",

}

TY - CONF

T1 - Microstructure Evolution and Effect on Resistivity for Cu Nanointerconnects and Beyond

AU - Spinella, Laura

AU - Hu, Szu-Tung

AU - Cao, Linjun

AU - Ho, Paul

PY - 2019

Y1 - 2019

N2 - In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the scaling effect on resistivity. The scaling effect on microstructure of Cu interconnects was analyzed to the 24 nm linewidth for the 14 nm node using a high-resolution TEM precession microdiffraction technique. The TEM study was supplemented by a Monte Carlo simulation to investigate grain growth in nanointerconnects based on local energy minimization. The scaling effect on electrical resistivity was analyzed for Cu, Ru and Co nanointerconnects, taking into account the contributions from surface and grain boundary scatterings. The results for Cu and Co are consistent with recent experiments.

AB - In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the scaling effect on resistivity. The scaling effect on microstructure of Cu interconnects was analyzed to the 24 nm linewidth for the 14 nm node using a high-resolution TEM precession microdiffraction technique. The TEM study was supplemented by a Monte Carlo simulation to investigate grain growth in nanointerconnects based on local energy minimization. The scaling effect on electrical resistivity was analyzed for Cu, Ru and Co nanointerconnects, taking into account the contributions from surface and grain boundary scatterings. The results for Cu and Co are consistent with recent experiments.

KW - Cu nanointerconnects

KW - microstructure

KW - resistivity

KW - scaling effects

U2 - 10.1109/IEDM.2018.8614547

DO - 10.1109/IEDM.2018.8614547

M3 - Paper

T2 - 2018 IEEE International Electron Devices Meeting (IEDM)

Y2 - 1 December 2018 through 5 December 2018

ER -

Microstructure Evolution and Effect on Resistivity for Cu Nanointerconnects and Beyond

Abstract

Conference

NREL Publication Number

Keywords

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