Microstructure Evolution and Implications for Cu Nanointerconnects and Beyond

Laura Spinella; Szu-Tung Hu; Linjun Cao; Paul Ho

doi:10.1109/IITC.2018.8430393

Microstructure Evolution and Implications for Cu Nanointerconnects and Beyond

Laura Spinella, Szu-Tung Hu, Linjun Cao, Paul Ho

Materials Science

Research output: Contribution to conference › Paper

Abstract

The continued scaling of Cu low k technology is facing serious challenges imposed by basic limits from materials, processing and reliability. This has generated great interests recently to further develop Cu nanointerconnects and alternates, particularly Co and Ru nanointerconnects beyond the 10nm node. The performance and reliability are important considerations for the development of nanointerconnects in addition to challenges from processing complexity and manufacturing cost. In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the effects on resistivity and electromigration (EM), two key factors contributing to the RC delay and reliability of the nanointerconnects.

Original language	American English
Pages	46-47
Number of pages	2
DOIs	https://doi.org/10.1109/IITC.2018.8430393
State	Published - 2018
Event	2018 IEEE International Interconnect Technology Conference (IITC) - Santa Clara, California Duration: 4 Jun 2018 → 7 Jun 2018

Conference

Conference	2018 IEEE International Interconnect Technology Conference (IITC)
City	Santa Clara, California
Period	4/06/18 → 7/06/18

NREL Publication Number

NREL/CP-5K00-72490

Keywords

conductivity
electromigration
grain boundaries
microelectronics
microstructure
reliability
strain

Access to Document

10.1109/IITC.2018.8430393

Cite this

@conference{3b0d641d1f134a78a99becaf3ebd4f9b,

title = "Microstructure Evolution and Implications for Cu Nanointerconnects and Beyond",

abstract = "The continued scaling of Cu low k technology is facing serious challenges imposed by basic limits from materials, processing and reliability. This has generated great interests recently to further develop Cu nanointerconnects and alternates, particularly Co and Ru nanointerconnects beyond the 10nm node. The performance and reliability are important considerations for the development of nanointerconnects in addition to challenges from processing complexity and manufacturing cost. In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the effects on resistivity and electromigration (EM), two key factors contributing to the RC delay and reliability of the nanointerconnects.",

keywords = "conductivity, electromigration, grain boundaries, microelectronics, microstructure, reliability, strain",

author = "Laura Spinella and Szu-Tung Hu and Linjun Cao and Paul Ho",

year = "2018",

doi = "10.1109/IITC.2018.8430393",

language = "American English",

pages = "46--47",

note = "2018 IEEE International Interconnect Technology Conference (IITC) ; Conference date: 04-06-2018 Through 07-06-2018",

}

TY - CONF

T1 - Microstructure Evolution and Implications for Cu Nanointerconnects and Beyond

AU - Spinella, Laura

AU - Hu, Szu-Tung

AU - Cao, Linjun

AU - Ho, Paul

PY - 2018

Y1 - 2018

N2 - The continued scaling of Cu low k technology is facing serious challenges imposed by basic limits from materials, processing and reliability. This has generated great interests recently to further develop Cu nanointerconnects and alternates, particularly Co and Ru nanointerconnects beyond the 10nm node. The performance and reliability are important considerations for the development of nanointerconnects in addition to challenges from processing complexity and manufacturing cost. In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the effects on resistivity and electromigration (EM), two key factors contributing to the RC delay and reliability of the nanointerconnects.

AB - The continued scaling of Cu low k technology is facing serious challenges imposed by basic limits from materials, processing and reliability. This has generated great interests recently to further develop Cu nanointerconnects and alternates, particularly Co and Ru nanointerconnects beyond the 10nm node. The performance and reliability are important considerations for the development of nanointerconnects in addition to challenges from processing complexity and manufacturing cost. In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the effects on resistivity and electromigration (EM), two key factors contributing to the RC delay and reliability of the nanointerconnects.

KW - conductivity

KW - electromigration

KW - grain boundaries

KW - microelectronics

KW - microstructure

KW - reliability

KW - strain

U2 - 10.1109/IITC.2018.8430393

DO - 10.1109/IITC.2018.8430393

M3 - Paper

SP - 46

EP - 47

T2 - 2018 IEEE International Interconnect Technology Conference (IITC)

Y2 - 4 June 2018 through 7 June 2018

ER -

Microstructure Evolution and Implications for Cu Nanointerconnects and Beyond

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this