Microstructure of Surface Layers in Cu(In,Ga)Se2 Thin Films

    Research output: Contribution to conferencePaper


    In most Cu(In,Ga)Se2 thin films used for solar cells, there usually exist interfaces lying about 0.1 to 0.2 ?m below the surfaces. We report on a convergent-beam electron diffraction and energy-dispersive X-ray spectroscopy study of the microstructure and chemical composition of the surface region in Cu(In,Ga)Se2 thin films. We find that the surface region and the bulk are structurally similar,with no ordered defect chalcopyrite structure observed. However, their composition is slightly different, indicating that they can have different point-defect physics. Our results suggest that the subinterfaces and the bulk absorber may form homojunctions.
    Original languageAmerican English
    Number of pages7
    StatePublished - 2003
    EventNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado
    Duration: 24 Mar 200326 Mar 2003


    ConferenceNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting
    CityDenver, Colorado

    NREL Publication Number

    • NREL/CP-520-33615


    • CIGS
    • convergent-beam electron diffraction
    • energy-dispersive x-ray spectroscopy
    • homojunction
    • interfaces
    • microstructures
    • point-defect physics
    • thin films


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