Microstructure of Surface Layers in Cu(In,Ga)Se2 Thin Films

Y. Yan, K. M. Jones, J. Abushama, M. Young, S. Asher, M. M. Al-Jassim, R. Noufi

Research output: Contribution to journalArticlepeer-review

64 Scopus Citations


In most Cu(In,Ga)Se2 thin films used for solar cells, there usually exist interfaces lying about 0.1 to 0.2 μm below surfaces. We report on convergent-beam electron diffraction and energy-dispersive x-ray spectroscopy study of the microstructure and chemical composition of the surface region in Cu(In,Ga)Se2 thin films. We find that the surface region and the bulk are structurally similar, with no ordered defect chalcopyrite structure observed. However, their composition is slightly different, indicating that they can have different point defect physics. Our results suggest that the subinterfaces and the bulk absorber may form homojunctions.

Original languageAmerican English
Pages (from-to)1008-1010
Number of pages3
JournalApplied Physics Letters
Issue number6
StatePublished - 2002

NREL Publication Number

  • NREL/JA-520-31602


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