Microstructure of Surface Layers in Cu(In,Ga)Se2 Thin Films

Y. Yan; K. M. Jones; J. Abushama; M. Young; S. Asher; M. M. Al-Jassim; R. Noufi

doi:10.1063/1.1498499

Microstructure of Surface Layers in Cu(In,Ga)Se2 Thin Films

Y. Yan, K. M. Jones, J. Abushama, M. Young, S. Asher, M. M. Al-Jassim, R. Noufi

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

65 Scopus Citations

Abstract

In most Cu(In,Ga)Se₂ thin films used for solar cells, there usually exist interfaces lying about 0.1 to 0.2 μm below surfaces. We report on convergent-beam electron diffraction and energy-dispersive x-ray spectroscopy study of the microstructure and chemical composition of the surface region in Cu(In,Ga)Se₂ thin films. We find that the surface region and the bulk are structurally similar, with no ordered defect chalcopyrite structure observed. However, their composition is slightly different, indicating that they can have different point defect physics. Our results suggest that the subinterfaces and the bulk absorber may form homojunctions.

Original language	American English
Pages (from-to)	1008-1010
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	6
DOIs	https://doi.org/10.1063/1.1498499 https://doi.org/10.1063/1.1498499
State	Published - 2002

NREL Publication Number

NREL/JA-520-31602

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title = "Microstructure of Surface Layers in Cu(In,Ga)Se2 Thin Films",

abstract = "In most Cu(In,Ga)Se2 thin films used for solar cells, there usually exist interfaces lying about 0.1 to 0.2 μm below surfaces. We report on convergent-beam electron diffraction and energy-dispersive x-ray spectroscopy study of the microstructure and chemical composition of the surface region in Cu(In,Ga)Se2 thin films. We find that the surface region and the bulk are structurally similar, with no ordered defect chalcopyrite structure observed. However, their composition is slightly different, indicating that they can have different point defect physics. Our results suggest that the subinterfaces and the bulk absorber may form homojunctions.",

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T1 - Microstructure of Surface Layers in Cu(In,Ga)Se2 Thin Films

AU - Yan, Y.

AU - Jones, K. M.

AU - Abushama, J.

AU - Young, M.

AU - Asher, S.

AU - Al-Jassim, M. M.

AU - Noufi, R.

PY - 2002

Y1 - 2002

N2 - In most Cu(In,Ga)Se2 thin films used for solar cells, there usually exist interfaces lying about 0.1 to 0.2 μm below surfaces. We report on convergent-beam electron diffraction and energy-dispersive x-ray spectroscopy study of the microstructure and chemical composition of the surface region in Cu(In,Ga)Se2 thin films. We find that the surface region and the bulk are structurally similar, with no ordered defect chalcopyrite structure observed. However, their composition is slightly different, indicating that they can have different point defect physics. Our results suggest that the subinterfaces and the bulk absorber may form homojunctions.

AB - In most Cu(In,Ga)Se2 thin films used for solar cells, there usually exist interfaces lying about 0.1 to 0.2 μm below surfaces. We report on convergent-beam electron diffraction and energy-dispersive x-ray spectroscopy study of the microstructure and chemical composition of the surface region in Cu(In,Ga)Se2 thin films. We find that the surface region and the bulk are structurally similar, with no ordered defect chalcopyrite structure observed. However, their composition is slightly different, indicating that they can have different point defect physics. Our results suggest that the subinterfaces and the bulk absorber may form homojunctions.

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M3 - Article

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VL - 81

SP - 1008

EP - 1010

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Microstructure of Surface Layers in Cu(In,Ga)Se2 Thin Films

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