Midgap Electroabsorption in Amorphous Silicon-Based Schottky Diodes

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)559-562
    Number of pages4
    JournalJournal of Non-Crystalline Solids
    Volume77 & 78
    Issue numberPart I
    DOIs
    StatePublished - 1985

    Bibliographical note

    Work performed by Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts

    NREL Publication Number

    • ACNR/JA-7264

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