Millimeter-Wave Loaded Line Ferroelectric Phase Shifters

A. Kozyrev, A. Ivanov, O. Soldatenkov, A. Tumarkin, S. Ivanova, T. Kaydanova, J. D. Perkins, J. Alleman, D. S. Ginley, L. Sengupta, L. Chiu, X. Zhang

Research output: Contribution to journalArticlepeer-review

17 Scopus Citations


Ferroelectric loaded line phase shifters operating at millimeter waves for phased array antenna applications are presented. Phase shifters were manufactured on using Ba 0.3Sr 0.7TiO 3 thin films. The magnetron sputtering process was used to fabricate these Ba 0.3Sr 0.7TiO 3 ferroelectric films with a thickness ∼1 μm. The phase shifter operating at V-band (60 GHz) demonstrated continuous phase shift up to 220 deg and figure of merit (FOM) 22 deg/dB. The phase shifter operating at Ka-band (30 GHz) showed phase shift up to 360 deg and FOM 40 deg/dB.

Original languageAmerican English
Pages (from-to)847-852
Number of pages6
JournalIntegrated Ferroelectrics
Issue number1
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-36764


  • Ferroelectric thin films
  • Microwave devices
  • Phase shifters
  • Tunable


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