Miniband Dispersion in GaAs/AlxGa1-x As Superlattices with Wide Wells and Very Thin Barriers

M. W. Peterson; J. A. Turner; C. A. Parsons; A. J. Nozik; D. J. Arent; C. Van Hoof; G. Borghs; R. Houdré; H. Morkoç

doi:10.1063/1.100189

Miniband Dispersion in GaAs/AlxGa1-x As Superlattices with Wide Wells and Very Thin Barriers

M. W. Peterson, J. A. Turner, C. A. Parsons, A. J. Nozik, D. J. Arent, C. Van Hoof, G. Borghs, R. Houdré, H. Morkoç

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

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Abstract

Photoreflectance spectra have been used to characterize miniband formation in GaAs/ Al_x Ga_1-x As superlattices with wide wells (275-255 Å) and withb arriers as thin as 17 Å. Thirty-two optical transitions are resolved in the photoreflectance spectra of the 17 Å barrier sample. These experimental transitions match all those theoretically predicted from the selection rule Δn=0, including Γ- and Π-type transitions arising from miniband dispersion; these results imply sample perfection. A sample with a 40 Å barrier exhibits forbidden transitions with Δn≠0; these additional transitions, together with the narrow width of the minibands for 40 Å barriers, create difficulty in resolving the miniband structure.

Original language	American English
Pages (from-to)	2666-2668
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	26
DOIs	https://doi.org/10.1063/1.100189 https://doi.org/10.1063/1.100189
State	Published - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado; Interuniversitair Micro-Elektronica Centrum uzw, Leuven, Belgium; and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois

NREL Publication Number

ACNR/JA-236-11369

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@article{a993beabba444c1db6fc9484c6e28e9c,

title = "Miniband Dispersion in GaAs/AlxGa1-x As Superlattices with Wide Wells and Very Thin Barriers",

abstract = "Photoreflectance spectra have been used to characterize miniband formation in GaAs/ Alx Ga1-x As superlattices with wide wells (275-255 {\AA}) and withb arriers as thin as 17 {\AA}. Thirty-two optical transitions are resolved in the photoreflectance spectra of the 17 {\AA} barrier sample. These experimental transitions match all those theoretically predicted from the selection rule Δn=0, including Γ- and Π-type transitions arising from miniband dispersion; these results imply sample perfection. A sample with a 40 {\AA} barrier exhibits forbidden transitions with Δn≠0; these additional transitions, together with the narrow width of the minibands for 40 {\AA} barriers, create difficulty in resolving the miniband structure.",

author = "Peterson, {M. W.} and Turner, {J. A.} and Parsons, {C. A.} and Nozik, {A. J.} and Arent, {D. J.} and {Van Hoof}, C. and G. Borghs and R. Houdr{\'e} and H. Morko{\c c}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado; Interuniversitair Micro-Elektronica Centrum uzw, Leuven, Belgium; and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois",

year = "1988",

doi = "10.1063/1.100189",

language = "American English",

volume = "53",

pages = "2666--2668",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Miniband Dispersion in GaAs/AlxGa1-x As Superlattices with Wide Wells and Very Thin Barriers

AU - Peterson, M. W.

AU - Turner, J. A.

AU - Parsons, C. A.

AU - Nozik, A. J.

AU - Arent, D. J.

AU - Van Hoof, C.

AU - Borghs, G.

AU - Houdré, R.

AU - Morkoç, H.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado; Interuniversitair Micro-Elektronica Centrum uzw, Leuven, Belgium; and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois

PY - 1988

Y1 - 1988

N2 - Photoreflectance spectra have been used to characterize miniband formation in GaAs/ Alx Ga1-x As superlattices with wide wells (275-255 Å) and withb arriers as thin as 17 Å. Thirty-two optical transitions are resolved in the photoreflectance spectra of the 17 Å barrier sample. These experimental transitions match all those theoretically predicted from the selection rule Δn=0, including Γ- and Π-type transitions arising from miniband dispersion; these results imply sample perfection. A sample with a 40 Å barrier exhibits forbidden transitions with Δn≠0; these additional transitions, together with the narrow width of the minibands for 40 Å barriers, create difficulty in resolving the miniband structure.

AB - Photoreflectance spectra have been used to characterize miniband formation in GaAs/ Alx Ga1-x As superlattices with wide wells (275-255 Å) and withb arriers as thin as 17 Å. Thirty-two optical transitions are resolved in the photoreflectance spectra of the 17 Å barrier sample. These experimental transitions match all those theoretically predicted from the selection rule Δn=0, including Γ- and Π-type transitions arising from miniband dispersion; these results imply sample perfection. A sample with a 40 Å barrier exhibits forbidden transitions with Δn≠0; these additional transitions, together with the narrow width of the minibands for 40 Å barriers, create difficulty in resolving the miniband structure.

UR - http://www.scopus.com/inward/record.url?scp=0346310223&partnerID=8YFLogxK

U2 - 10.1063/1.100189

DO - 10.1063/1.100189

M3 - Article

AN - SCOPUS:0346310223

SN - 0003-6951

VL - 53

SP - 2666

EP - 2668

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Miniband Dispersion in GaAs/AlxGa1-x As Superlattices with Wide Wells and Very Thin Barriers

Abstract

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