Miniband Dispersion in GaAs/AlxGa1-x As Superlattices with Wide Wells and Very Thin Barriers

M. W. Peterson; J. A. Turner; C. A. Parsons; A. J. Nozik; D. J. Arent; C. Van Hoof; G. Borghs; R. Houdré; H. Morkoç

doi:10.1063/1.100189

Miniband Dispersion in GaAs/AlxGa1-x As Superlattices with Wide Wells and Very Thin Barriers

M. W. Peterson
, J. A. Turner
, C. A. Parsons
, A. J. Nozik
, D. J. Arent
, C. Van Hoof
, G. Borghs
, R. Houdré
, H. Morkoç

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

22 Scopus Citations

Abstract

Photoreflectance spectra have been used to characterize miniband formation in GaAs/ Al_x Ga_1-x As superlattices with wide wells (275-255 Å) and withb arriers as thin as 17 Å. Thirty-two optical transitions are resolved in the photoreflectance spectra of the 17 Å barrier sample. These experimental transitions match all those theoretically predicted from the selection rule Δn=0, including Γ- and Π-type transitions arising from miniband dispersion; these results imply sample perfection. A sample with a 40 Å barrier exhibits forbidden transitions with Δn≠0; these additional transitions, together with the narrow width of the minibands for 40 Å barriers, create difficulty in resolving the miniband structure.

Original language	American English
Pages (from-to)	2666-2668
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	26
DOIs	https://doi.org/10.1063/1.100189 https://doi.org/10.1063/1.100189
State	Published - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado; Interuniversitair Micro-Elektronica Centrum uzw, Leuven, Belgium; and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois

NLR Publication Number

ACNR/JA-236-11369

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@article{a993beabba444c1db6fc9484c6e28e9c,

title = "Miniband Dispersion in GaAs/AlxGa1-x As Superlattices with Wide Wells and Very Thin Barriers",

abstract = "Photoreflectance spectra have been used to characterize miniband formation in GaAs/ Alx Ga1-x As superlattices with wide wells (275-255 {\AA}) and withb arriers as thin as 17 {\AA}. Thirty-two optical transitions are resolved in the photoreflectance spectra of the 17 {\AA} barrier sample. These experimental transitions match all those theoretically predicted from the selection rule Δn=0, including Γ- and Π-type transitions arising from miniband dispersion; these results imply sample perfection. A sample with a 40 {\AA} barrier exhibits forbidden transitions with Δn≠0; these additional transitions, together with the narrow width of the minibands for 40 {\AA} barriers, create difficulty in resolving the miniband structure.",

author = "Peterson, \{M. W.\} and Turner, \{J. A.\} and Parsons, \{C. A.\} and Nozik, \{A. J.\} and Arent, \{D. J.\} and \{Van Hoof\}, C. and G. Borghs and R. Houdr{\'e} and H. Morko{\c c}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado; Interuniversitair Micro-Elektronica Centrum uzw, Leuven, Belgium; and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois",

year = "1988",

doi = "10.1063/1.100189",

language = "American English",

volume = "53",

pages = "2666--2668",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

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TY - JOUR

T1 - Miniband Dispersion in GaAs/AlxGa1-x As Superlattices with Wide Wells and Very Thin Barriers

AU - Peterson, M. W.

AU - Turner, J. A.

AU - Parsons, C. A.

AU - Nozik, A. J.

AU - Arent, D. J.

AU - Van Hoof, C.

AU - Borghs, G.

AU - Houdré, R.

AU - Morkoç, H.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado; Interuniversitair Micro-Elektronica Centrum uzw, Leuven, Belgium; and Coordinated Science Laboratory, University of Illinois, Urbana, Illinois

PY - 1988

Y1 - 1988

N2 - Photoreflectance spectra have been used to characterize miniband formation in GaAs/ Alx Ga1-x As superlattices with wide wells (275-255 Å) and withb arriers as thin as 17 Å. Thirty-two optical transitions are resolved in the photoreflectance spectra of the 17 Å barrier sample. These experimental transitions match all those theoretically predicted from the selection rule Δn=0, including Γ- and Π-type transitions arising from miniband dispersion; these results imply sample perfection. A sample with a 40 Å barrier exhibits forbidden transitions with Δn≠0; these additional transitions, together with the narrow width of the minibands for 40 Å barriers, create difficulty in resolving the miniband structure.

AB - Photoreflectance spectra have been used to characterize miniband formation in GaAs/ Alx Ga1-x As superlattices with wide wells (275-255 Å) and withb arriers as thin as 17 Å. Thirty-two optical transitions are resolved in the photoreflectance spectra of the 17 Å barrier sample. These experimental transitions match all those theoretically predicted from the selection rule Δn=0, including Γ- and Π-type transitions arising from miniband dispersion; these results imply sample perfection. A sample with a 40 Å barrier exhibits forbidden transitions with Δn≠0; these additional transitions, together with the narrow width of the minibands for 40 Å barriers, create difficulty in resolving the miniband structure.

UR - https://www.scopus.com/pages/publications/0346310223

U2 - 10.1063/1.100189

DO - 10.1063/1.100189

M3 - Article

AN - SCOPUS:0346310223

SN - 0003-6951

VL - 53

SP - 2666

EP - 2668

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Miniband Dispersion in GaAs/AlxGa1-x As Superlattices with Wide Wells and Very Thin Barriers

Abstract

Bibliographical note

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