Abstract
Minority-carrier diffusion has been investigated in as-grown CdZnS/CuInSe2 solar cells. Capacitance-voltage (C-V) and photoconductivity measurements are combined to determine diffusion and interface recombination processes. Diffusion lengths of about 2 μm and a small interface recombination velocity are determined from biased photoconductivity, biased spectral response, and photoluminescence studies. Photoluminescence studies also indicate that a much lower interface recombination velocity occurs at the CdZnS/CuInSe2 interface than that at a bare CuInSe2 surface.
Original language | American English |
---|---|
Pages (from-to) | 1362-1365 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 58 |
Issue number | 3 |
DOIs | |
State | Published - 1985 |
NREL Publication Number
- ACNR/JA-213-6495