Minority-Carrier Diffusion and Recombination in CdZnS/CuInSe2 Solar Cells

R. K. Ahrenkiel, R. J. Matson, C. R. Osterwald, D. J. Dunlavy, L. L. Kazmerski

Research output: Contribution to journalArticlepeer-review

7 Scopus Citations


Minority-carrier diffusion has been investigated in as-grown CdZnS/CuInSe2 solar cells. Capacitance-voltage (C-V) and photoconductivity measurements are combined to determine diffusion and interface recombination processes. Diffusion lengths of about 2 μm and a small interface recombination velocity are determined from biased photoconductivity, biased spectral response, and photoluminescence studies. Photoluminescence studies also indicate that a much lower interface recombination velocity occurs at the CdZnS/CuInSe2 interface than that at a bare CuInSe2 surface.

Original languageAmerican English
Pages (from-to)1362-1365
Number of pages4
JournalJournal of Applied Physics
Issue number3
StatePublished - 1985

NREL Publication Number

  • ACNR/JA-213-6495


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