Minority Carrier Diffusion Length Degradation in Silicon: Who is the Culprit?

Minority Carrier Diffusion Length Degradation in Silicon: Who is the Culprit?

Research output: Contribution to conference › Paper

Abstract

The influence of transition metals on minority carrier diffusion length in silicon is discussed. It is shown that transition metals easily precipitate on silicon lattice microdefects. These precipitates can not be easily dissolved, which makes gettering procedure ineffective. This conclusion is confirmed by experiments on FZ, CZ and photovoltaic silicon, discussed in this paper. The recombinationactivity of interstitial copper and its capture cross-section for electrons are determined. The recombination activity of interstitial and precipitated copper and iron are compared. It is shown that the precipitates of copper have much higher recombination activity than the interstitial copper, whereas iron is very active in both precipitated in interstitial form.

Original language	American English
Pages	18-29
Number of pages	12
State	Published - 1998
Event	Recombination Lifetime Measurements in Silicon: Advanced Workshop on Silicon Recombination Lifetime Characterization Methods - Santa Clara, California Duration: 2 Jun 1997 → 3 Jun 1997

Conference

Conference	Recombination Lifetime Measurements in Silicon: Advanced Workshop on Silicon Recombination Lifetime Characterization Methods
City	Santa Clara, California
Period	2/06/97 → 3/06/97

Bibliographical note

Work performed by University of California, Berkeley, California

NREL Publication Number

NREL/CP-520-26137

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@conference{43f4573eb96548c09bf3ff9f82e91729,

title = "Minority Carrier Diffusion Length Degradation in Silicon: Who is the Culprit?",

abstract = "The influence of transition metals on minority carrier diffusion length in silicon is discussed. It is shown that transition metals easily precipitate on silicon lattice microdefects. These precipitates can not be easily dissolved, which makes gettering procedure ineffective. This conclusion is confirmed by experiments on FZ, CZ and photovoltaic silicon, discussed in this paper. The recombinationactivity of interstitial copper and its capture cross-section for electrons are determined. The recombination activity of interstitial and precipitated copper and iron are compared. It is shown that the precipitates of copper have much higher recombination activity than the interstitial copper, whereas iron is very active in both precipitated in interstitial form.",

author = "NREL",

note = "Work performed by University of California, Berkeley, California; Recombination Lifetime Measurements in Silicon: Advanced Workshop on Silicon Recombination Lifetime Characterization Methods ; Conference date: 02-06-1997 Through 03-06-1997",

year = "1998",