Minority Carrier Diffusion Length of p-GaAs Determined by Time of Flight

B. M. Keyes; D. J. Dunlavy; R. K. Ahrenkiel; S. E. Asher; L. D. Partain; D. D. Liu

doi:10.1116/1.576796

Minority Carrier Diffusion Length of p-GaAs Determined by Time of Flight

B. M. Keyes, D. J. Dunlavy, R. K. Ahrenkiel, S. E. Asher, L. D. Partain, D. D. Liu

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

12 Scopus Citations

Abstract

A diffusion time-of-flight (TOF) technique is described and analysis is performed on four different p-GaAs heterostructure devices. These p/n junction devices were grown by metal organic chemical vapor deposition (MOCVD). Both Zn and Mg were used as dopants with concentrations ranging from 1X10¹⁸ to 1 × 10¹⁹ cm ⁻³. We have been able to determine the diffusivity (D) along with upper and lower estimates of the diffusion length (L_D). The results imply the presence of a mechanism such as photon recycling.

Original language	American English
Pages (from-to)	2004-2008
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	8
Issue number	3
DOIs	https://doi.org/10.1116/1.576796 https://doi.org/10.1116/1.576796
State	Published - 1990

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Varian Research Center, Palo Alto, California

NREL Publication Number

ACNR/JA-213-11799

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title = "Minority Carrier Diffusion Length of p-GaAs Determined by Time of Flight",

abstract = "A diffusion time-of-flight (TOF) technique is described and analysis is performed on four different p-GaAs heterostructure devices. These p/n junction devices were grown by metal organic chemical vapor deposition (MOCVD). Both Zn and Mg were used as dopants with concentrations ranging from 1X1018 to 1 × 1019 cm −3. We have been able to determine the diffusivity (D) along with upper and lower estimates of the diffusion length (LD). The results imply the presence of a mechanism such as photon recycling.",

author = "Keyes, {B. M.} and Dunlavy, {D. J.} and Ahrenkiel, {R. K.} and Asher, {S. E.} and Partain, {L. D.} and Liu, {D. D.}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Varian Research Center, Palo Alto, California",

year = "1990",

doi = "10.1116/1.576796",

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T1 - Minority Carrier Diffusion Length of p-GaAs Determined by Time of Flight

AU - Keyes, B. M.

AU - Dunlavy, D. J.

AU - Ahrenkiel, R. K.

AU - Asher, S. E.

AU - Partain, L. D.

AU - Liu, D. D.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Varian Research Center, Palo Alto, California

PY - 1990

Y1 - 1990

N2 - A diffusion time-of-flight (TOF) technique is described and analysis is performed on four different p-GaAs heterostructure devices. These p/n junction devices were grown by metal organic chemical vapor deposition (MOCVD). Both Zn and Mg were used as dopants with concentrations ranging from 1X1018 to 1 × 1019 cm −3. We have been able to determine the diffusivity (D) along with upper and lower estimates of the diffusion length (LD). The results imply the presence of a mechanism such as photon recycling.

AB - A diffusion time-of-flight (TOF) technique is described and analysis is performed on four different p-GaAs heterostructure devices. These p/n junction devices were grown by metal organic chemical vapor deposition (MOCVD). Both Zn and Mg were used as dopants with concentrations ranging from 1X1018 to 1 × 1019 cm −3. We have been able to determine the diffusivity (D) along with upper and lower estimates of the diffusion length (LD). The results imply the presence of a mechanism such as photon recycling.

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U2 - 10.1116/1.576796

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SN - 0734-2101

VL - 8

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EP - 2008

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Minority Carrier Diffusion Length of p-GaAs Determined by Time of Flight

Abstract

Bibliographical note

NREL Publication Number

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