Minority Carrier Diffusion Length of p-GaAs Determined by Time of Flight

B. M. Keyes, D. J. Dunlavy, R. K. Ahrenkiel, S. E. Asher, L. D. Partain, D. D. Liu

Research output: Contribution to journalArticlepeer-review

12 Scopus Citations


A diffusion time-of-flight (TOF) technique is described and analysis is performed on four different p-GaAs heterostructure devices. These p/n junction devices were grown by metal organic chemical vapor deposition (MOCVD). Both Zn and Mg were used as dopants with concentrations ranging from 1X1018 to 1 × 1019 cm −3. We have been able to determine the diffusivity (D) along with upper and lower estimates of the diffusion length (LD). The results imply the presence of a mechanism such as photon recycling.

Original languageAmerican English
Pages (from-to)2004-2008
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - 1990

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Varian Research Center, Palo Alto, California

NREL Publication Number

  • ACNR/JA-213-11799


Dive into the research topics of 'Minority Carrier Diffusion Length of p-GaAs Determined by Time of Flight'. Together they form a unique fingerprint.

Cite this