Abstract
We describe a new time-resolved photoluminescence (TRPL) analysis method for the determination of minority carrier lifetime τB. This analysis is based on subbandgap excitation (two-photon excitation, or 2PE) and allows selective lifetime determination at the surface or in the bulk of semiconductor absorbers. We show that for single-crystal CdTe, τB could be determined even if surface recombination velocity is >10 5 cm s-1. Two-photon excitation TRPL measurements indicate that radiative lifetime in undoped CdTe is >>66 ns. We also compare one-photon excitation (1PE) and 2PE TRPL data for polycrystalline CdS/CdTe thin films.
Original language | American English |
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Article number | 6553424 |
Pages (from-to) | 1319-1324 |
Number of pages | 6 |
Journal | IEEE Journal of Photovoltaics |
Volume | 3 |
Issue number | 4 |
DOIs | |
State | Published - 2013 |
NREL Publication Number
- NREL/CP-5200-57837
Keywords
- Cadmium telluride
- minority carrier lifetime
- photovoltaic (PV) device
- time-resolved photoluminescence (TRPL)