Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation

Darius Kuciauskas; Ana Kanevce; James M. Burst; Joel N. Duenow; Ramesh Dhere; David S. Albin; Dean H. Levi; Richard K. Ahrenkiel

doi:10.1109/JPHOTOV.2013.2270354

Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation

Darius Kuciauskas
, Ana Kanevce
, James M. Burst
, Joel N. Duenow
, Ramesh Dhere
, David S. Albin
, Dean H. Levi
, Richard K. Ahrenkiel

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

97 Scopus Citations

Abstract

We describe a new time-resolved photoluminescence (TRPL) analysis method for the determination of minority carrier lifetime τ_B. This analysis is based on subbandgap excitation (two-photon excitation, or 2PE) and allows selective lifetime determination at the surface or in the bulk of semiconductor absorbers. We show that for single-crystal CdTe, τ_B could be determined even if surface recombination velocity is >10 ⁵ cm s^-1. Two-photon excitation TRPL measurements indicate that radiative lifetime in undoped CdTe is >>66 ns. We also compare one-photon excitation (1PE) and 2PE TRPL data for polycrystalline CdS/CdTe thin films.

Original language	American English
Article number	6553424
Pages (from-to)	1319-1324
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	3
Issue number	4
DOIs	https://doi.org/10.1109/JPHOTOV.2013.2270354 https://doi.org/10.1109/JPHOTOV.2013.2270354
State	Published - 2013

NLR Publication Number

NREL/CP-5200-57837

Keywords

Cadmium telluride
minority carrier lifetime
photovoltaic (PV) device
time-resolved photoluminescence (TRPL)

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Kuciauskas, D., Kanevce, A., Burst, J. M., Duenow, J. N., Dhere, R., Albin, D. S., Levi, D. H., & Ahrenkiel, R. K. (2013). Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation. IEEE Journal of Photovoltaics, 3(4), 1319-1324. Article 6553424. https://doi.org/10.1109/JPHOTOV.2013.2270354, https://doi.org/10.1109/JPHOTOV.2013.2270354

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title = "Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation",

abstract = "We describe a new time-resolved photoluminescence (TRPL) analysis method for the determination of minority carrier lifetime τB. This analysis is based on subbandgap excitation (two-photon excitation, or 2PE) and allows selective lifetime determination at the surface or in the bulk of semiconductor absorbers. We show that for single-crystal CdTe, τB could be determined even if surface recombination velocity is >10 5 cm s-1. Two-photon excitation TRPL measurements indicate that radiative lifetime in undoped CdTe is >>66 ns. We also compare one-photon excitation (1PE) and 2PE TRPL data for polycrystalline CdS/CdTe thin films.",

keywords = "Cadmium telluride, minority carrier lifetime, photovoltaic (PV) device, time-resolved photoluminescence (TRPL)",

author = "Darius Kuciauskas and Ana Kanevce and Burst, \{James M.\} and Duenow, \{Joel N.\} and Ramesh Dhere and Albin, \{David S.\} and Levi, \{Dean H.\} and Ahrenkiel, \{Richard K.\}",

year = "2013",

doi = "10.1109/JPHOTOV.2013.2270354",

language = "American English",

volume = "3",

pages = "1319--1324",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

number = "4",

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Kuciauskas, D, Kanevce, A, Burst, JM, Duenow, JN, Dhere, R, Albin, DS, Levi, DH & Ahrenkiel, RK 2013, 'Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation', IEEE Journal of Photovoltaics, vol. 3, no. 4, 6553424, pp. 1319-1324. https://doi.org/10.1109/JPHOTOV.2013.2270354, https://doi.org/10.1109/JPHOTOV.2013.2270354

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T1 - Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation

AU - Kuciauskas, Darius

AU - Kanevce, Ana

AU - Burst, James M.

AU - Duenow, Joel N.

AU - Dhere, Ramesh

AU - Albin, David S.

AU - Levi, Dean H.

AU - Ahrenkiel, Richard K.

PY - 2013

Y1 - 2013

N2 - We describe a new time-resolved photoluminescence (TRPL) analysis method for the determination of minority carrier lifetime τB. This analysis is based on subbandgap excitation (two-photon excitation, or 2PE) and allows selective lifetime determination at the surface or in the bulk of semiconductor absorbers. We show that for single-crystal CdTe, τB could be determined even if surface recombination velocity is >10 5 cm s-1. Two-photon excitation TRPL measurements indicate that radiative lifetime in undoped CdTe is >>66 ns. We also compare one-photon excitation (1PE) and 2PE TRPL data for polycrystalline CdS/CdTe thin films.

AB - We describe a new time-resolved photoluminescence (TRPL) analysis method for the determination of minority carrier lifetime τB. This analysis is based on subbandgap excitation (two-photon excitation, or 2PE) and allows selective lifetime determination at the surface or in the bulk of semiconductor absorbers. We show that for single-crystal CdTe, τB could be determined even if surface recombination velocity is >10 5 cm s-1. Two-photon excitation TRPL measurements indicate that radiative lifetime in undoped CdTe is >>66 ns. We also compare one-photon excitation (1PE) and 2PE TRPL data for polycrystalline CdS/CdTe thin films.

KW - Cadmium telluride

KW - minority carrier lifetime

KW - photovoltaic (PV) device

KW - time-resolved photoluminescence (TRPL)

UR - https://www.scopus.com/pages/publications/84884596301

U2 - 10.1109/JPHOTOV.2013.2270354

DO - 10.1109/JPHOTOV.2013.2270354

M3 - Article

AN - SCOPUS:84884596301

SN - 2156-3381

VL - 3

SP - 1319

EP - 1324

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 4

M1 - 6553424

ER -

Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation

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