Abstract
We apply an earlier developed method [Kuciauskas et al., IEEE J. Photovoltaics , vol. 3, p. 1319, 2013] to analyze surface and bulk recombination in high-quality undoped single-crystal CdTe. By using two-photon excitation time-resolved photoluminescence, we determined a room-temperature minority-carrier lifetime of 360 ns. This lifetime has weak temperature dependence at 202-295 K. We also show that the high surface recombination velocity (>105 cm/s) typical for single-crystal CdTe was reduced by an order of magnitude to approx 1 104 cm/s.
| Original language | American English |
|---|---|
| Article number | 6917003 |
| Pages (from-to) | 366-371 |
| Number of pages | 6 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 5 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2015 |
Bibliographical note
Publisher Copyright:© 2014 IEEE.
NLR Publication Number
- NREL/JA-5J00-62303
Keywords
- Cadmium compounds
- charge-carrier lifetime
- photoluminescence (PL)
- photovoltaic cells