Minority-Carrier Lifetime Damage Coefficient of Irradiated InP

B. M. Keyes; R. K. Ahrenkiel; G. J. Shaw; G. P. Summers

doi:10.1063/1.366023

Minority-Carrier Lifetime Damage Coefficient of Irradiated InP

B. M. Keyes, R. K. Ahrenkiel, G. J. Shaw, G. P. Summers

Naval Research Laboratory

Research output: Contribution to journal › Article › peer-review

7 Scopus Citations

Abstract

Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5 × 10¹⁵and 1.3 × 10¹⁷ cm^-3) and p-type (2.5 × 10¹⁷ cm^-3) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 10⁴ and 10⁵, respectively.

Original language	American English
Pages (from-to)	2156-2163
Number of pages	8
Journal	Journal of Applied Physics
Volume	82
Issue number	5
DOIs	https://doi.org/10.1063/1.366023 https://doi.org/10.1063/1.366023
State	Published - 1997

NREL Publication Number

NREL/JA-412-21626

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title = "Minority-Carrier Lifetime Damage Coefficient of Irradiated InP",

abstract = "Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5 × 1015and 1.3 × 1017 cm-3) and p-type (2.5 × 1017 cm-3) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 104 and 105, respectively.",

author = "Keyes, {B. M.} and Ahrenkiel, {R. K.} and Shaw, {G. J.} and Summers, {G. P.}",

year = "1997",

doi = "10.1063/1.366023",

language = "American English",

volume = "82",

pages = "2156--2163",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Minority-Carrier Lifetime Damage Coefficient of Irradiated InP

AU - Keyes, B. M.

AU - Ahrenkiel, R. K.

AU - Shaw, G. J.

AU - Summers, G. P.

PY - 1997

Y1 - 1997

N2 - Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5 × 1015and 1.3 × 1017 cm-3) and p-type (2.5 × 1017 cm-3) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 104 and 105, respectively.

AB - Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5 × 1015and 1.3 × 1017 cm-3) and p-type (2.5 × 1017 cm-3) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 104 and 105, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0342895756&partnerID=8YFLogxK

U2 - 10.1063/1.366023

DO - 10.1063/1.366023

M3 - Article

AN - SCOPUS:0342895756

SN - 0021-8979

VL - 82

SP - 2156

EP - 2163

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Minority-Carrier Lifetime Damage Coefficient of Irradiated InP

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