Minority-Carrier Lifetime Damage Coefficient of Irradiated InP

B. M. Keyes, R. K. Ahrenkiel, G. J. Shaw, G. P. Summers

Research output: Contribution to journalArticlepeer-review

6 Scopus Citations


Minority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5 × 1015and 1.3 × 1017 cm-3) and p-type (2.5 × 1017 cm-3) InP have been measured using time-resolved photoluminescence. These values are relatively insensitive to carrier type and show a slight increase with increasing carrier concentration. Evidence of comparable electron and hole capture lifetimes is found for the dominant recombination defect. The effect of 3 MeV proton and 6 MeV alpha particles relative to 1 MeV electrons is an increase in the lifetime damage coefficient by factors of about 104 and 105, respectively.

Original languageAmerican English
Pages (from-to)2156-2163
Number of pages8
JournalJournal of Applied Physics
Issue number5
StatePublished - 1997

NREL Publication Number

  • NREL/JA-412-21626


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