Minority-Carrier Lifetime Degradation in Silicon Co-Doped with Iron and Gallium

doi:10.1109/PVSC.1997.653924

Minority-Carrier Lifetime Degradation in Silicon Co-Doped with Iron and Gallium

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Abstract

The effect of Fe-Ga pair defects on minority-carrier lifetime ..tau.. in high-purity, dislocation-free float-zoned Si is presented, and their properties are documented by deep-level transient spectroscopy and annealing studies. The typical ..tau.. of Fe-Ga co-doped crystals (0.4 ..mu..s) was dramatically lower than ..tau.. of crystals doped with similar amounts of either Fe alone (12 ..mu..s) or Ga alone (1,4000 ..mu..s), contrary to the ..tau.. behavior at low injection of Fe-B pair defects. Thermal dissociation of Fe-Ga pairs increased ..tau.., confirming a stronger carrier-recombination activity at Fe-Ga pairs than at interstitial Fe. Defect energies (relative to the valance band) equal to 0.10 and 0.21 eV were observed for Fe-Ga co-doped samples, and the correspondinghole-capture cross sections ( at T = ..infinity..) were 3 x 10-16 and 6 x 10-15 cm2. An estimation of the binding energies resulted in much lower values than expected (0.09eV and 0.15eV, respectively).

Original language	American English
Pages	59-62
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.653924
State	Published - 1997
Event	Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Twenty Sixth IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-450-22926

NREL Publication Number

NREL/CP-590-25036

Access to Document

10.1109/PVSC.1997.653924

Cite this

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title = "Minority-Carrier Lifetime Degradation in Silicon Co-Doped with Iron and Gallium",

abstract = "The effect of Fe-Ga pair defects on minority-carrier lifetime ..tau.. in high-purity, dislocation-free float-zoned Si is presented, and their properties are documented by deep-level transient spectroscopy and annealing studies. The typical ..tau.. of Fe-Ga co-doped crystals (0.4 ..mu..s) was dramatically lower than ..tau.. of crystals doped with similar amounts of either Fe alone (12 ..mu..s) or Ga alone (1,4000 ..mu..s), contrary to the ..tau.. behavior at low injection of Fe-B pair defects. Thermal dissociation of Fe-Ga pairs increased ..tau.., confirming a stronger carrier-recombination activity at Fe-Ga pairs than at interstitial Fe. Defect energies (relative to the valance band) equal to 0.10 and 0.21 eV were observed for Fe-Ga co-doped samples, and the correspondinghole-capture cross sections ( at T = ..infinity..) were 3 x 10-16 and 6 x 10-15 cm2. An estimation of the binding energies resulted in much lower values than expected (0.09eV and 0.15eV, respectively).",

author = "NREL",

note = "For preprint version, including full text online document, see NREL/CP-450-22926; Twenty Sixth IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.653924",

language = "American English",

pages = "59--62",

}

TY - CONF

T1 - Minority-Carrier Lifetime Degradation in Silicon Co-Doped with Iron and Gallium

AU - NREL, null

N1 - For preprint version, including full text online document, see NREL/CP-450-22926

PY - 1997

Y1 - 1997

N2 - The effect of Fe-Ga pair defects on minority-carrier lifetime ..tau.. in high-purity, dislocation-free float-zoned Si is presented, and their properties are documented by deep-level transient spectroscopy and annealing studies. The typical ..tau.. of Fe-Ga co-doped crystals (0.4 ..mu..s) was dramatically lower than ..tau.. of crystals doped with similar amounts of either Fe alone (12 ..mu..s) or Ga alone (1,4000 ..mu..s), contrary to the ..tau.. behavior at low injection of Fe-B pair defects. Thermal dissociation of Fe-Ga pairs increased ..tau.., confirming a stronger carrier-recombination activity at Fe-Ga pairs than at interstitial Fe. Defect energies (relative to the valance band) equal to 0.10 and 0.21 eV were observed for Fe-Ga co-doped samples, and the correspondinghole-capture cross sections ( at T = ..infinity..) were 3 x 10-16 and 6 x 10-15 cm2. An estimation of the binding energies resulted in much lower values than expected (0.09eV and 0.15eV, respectively).

AB - The effect of Fe-Ga pair defects on minority-carrier lifetime ..tau.. in high-purity, dislocation-free float-zoned Si is presented, and their properties are documented by deep-level transient spectroscopy and annealing studies. The typical ..tau.. of Fe-Ga co-doped crystals (0.4 ..mu..s) was dramatically lower than ..tau.. of crystals doped with similar amounts of either Fe alone (12 ..mu..s) or Ga alone (1,4000 ..mu..s), contrary to the ..tau.. behavior at low injection of Fe-B pair defects. Thermal dissociation of Fe-Ga pairs increased ..tau.., confirming a stronger carrier-recombination activity at Fe-Ga pairs than at interstitial Fe. Defect energies (relative to the valance band) equal to 0.10 and 0.21 eV were observed for Fe-Ga co-doped samples, and the correspondinghole-capture cross sections ( at T = ..infinity..) were 3 x 10-16 and 6 x 10-15 cm2. An estimation of the binding energies resulted in much lower values than expected (0.09eV and 0.15eV, respectively).

U2 - 10.1109/PVSC.1997.653924

DO - 10.1109/PVSC.1997.653924

M3 - Paper

SP - 59

EP - 62

T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Minority-Carrier Lifetime Degradation in Silicon Co-Doped with Iron and Gallium

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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Cite this