Minority-Carrier Lifetime in AlxGa1-xAs

R. K. Ahrenkiel; D. J. Dunlavy

doi:10.1116/1.575848

Minority-Carrier Lifetime in AlxGa1-xAs

R. K. Ahrenkiel, D. J. Dunlavy

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

23 Scopus Citations

Abstract

The minority-carrier lifetime of AlxGa1 x As has been measured in epitaxial materials grown by liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD). A general trend shows that the lifetime decreases with aluminum concentration x as reported previously. The lifetime at x~0.4 is appreciably larger in LPE material than in MOCVD material. At all x values, the lifetime of MOCVD material increased with the growth temperature. The results indicate that bulk Shockley-Read-Hall recombination dominates the lifetime. The latter are very dependent upon the growth conditions.

Original language	American English
Pages (from-to)	822-826
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	7
Issue number	3
DOIs	https://doi.org/10.1116/1.575848 https://doi.org/10.1116/1.575848
State	Published - May 1989

NREL Publication Number

ACNR/JA-213-11049

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AB - The minority-carrier lifetime of AlxGa1 x As has been measured in epitaxial materials grown by liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD). A general trend shows that the lifetime decreases with aluminum concentration x as reported previously. The lifetime at x~0.4 is appreciably larger in LPE material than in MOCVD material. At all x values, the lifetime of MOCVD material increased with the growth temperature. The results indicate that bulk Shockley-Read-Hall recombination dominates the lifetime. The latter are very dependent upon the growth conditions.

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Minority-Carrier Lifetime in AlxGa1-xAs

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