Abstract
The minority-carrier lifetime of AlxGa1 x As has been measured in epitaxial materials grown by liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD). A general trend shows that the lifetime decreases with aluminum concentration x as reported previously. The lifetime at x~0.4 is appreciably larger in LPE material than in MOCVD material. At all x values, the lifetime of MOCVD material increased with the growth temperature. The results indicate that bulk Shockley-Read-Hall recombination dominates the lifetime. The latter are very dependent upon the growth conditions.
Original language | American English |
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Pages (from-to) | 822-826 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 7 |
Issue number | 3 |
DOIs | |
State | Published - May 1989 |
NREL Publication Number
- ACNR/JA-213-11049