Minority-Carrier Lifetime in AlxGa1-xAs Grown by Molecular-Beam Epitaxy

R. K. Ahrenkiel, B. M. Keyes, T. C. Shen, J. I. Chyi, H. Morkoc

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AlxGa1-xAs (x>0.30) double heterostructures are grown by molecular-beam epitaxy (MBE) and the minority-carrier lifetimes are measured by time-resolved photoluminescence. The data indicate that the minority-carrier lifetimes in high aluminum (x>0.30) AlxGa 1-xAs grown by MBE are comparable to the previously published lifetimes of material grown by liquid-phase epitaxy. The lifetimes in MBE materials appear to be somewhat larger than those measured in materials grown by metalorganic chemical vapor deposition. Factors affecting AlGaAs minority-carrier lifetime, such as the growth temperature, the aluminum concentration, and the confinement layer composition will be discussed.

Original languageAmerican English
Pages (from-to)3094-3096
Number of pages3
JournalJournal of Applied Physics
Issue number5
StatePublished - 1991

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois

NREL Publication Number

  • ACNR/JA-213-11891


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