Minority-Carrier Lifetime in AlxGa1-xAs Grown by Molecular-Beam Epitaxy

R. K. Ahrenkiel; B. M. Keyes; T. C. Shen; J. I. Chyi; H. Morkoc

doi:10.1063/1.348573

Minority-Carrier Lifetime in AlxGa1-xAs Grown by Molecular-Beam Epitaxy

R. K. Ahrenkiel, B. M. Keyes, T. C. Shen, J. I. Chyi, H. Morkoc

University of Illinois at Urbana-Champaign

Research output: Contribution to journal › Article › peer-review

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Abstract

Al_xGa_1-xAs (x>0.30) double heterostructures are grown by molecular-beam epitaxy (MBE) and the minority-carrier lifetimes are measured by time-resolved photoluminescence. The data indicate that the minority-carrier lifetimes in high aluminum (x>0.30) Al_xGa _1-xAs grown by MBE are comparable to the previously published lifetimes of material grown by liquid-phase epitaxy. The lifetimes in MBE materials appear to be somewhat larger than those measured in materials grown by metalorganic chemical vapor deposition. Factors affecting AlGaAs minority-carrier lifetime, such as the growth temperature, the aluminum concentration, and the confinement layer composition will be discussed.

Original language	American English
Pages (from-to)	3094-3096
Number of pages	3
Journal	Journal of Applied Physics
Volume	69
Issue number	5
DOIs	https://doi.org/10.1063/1.348573 https://doi.org/10.1063/1.348573
State	Published - 1991

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois

NREL Publication Number

ACNR/JA-213-11891

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title = "Minority-Carrier Lifetime in AlxGa1-xAs Grown by Molecular-Beam Epitaxy",

abstract = "AlxGa1-xAs (x>0.30) double heterostructures are grown by molecular-beam epitaxy (MBE) and the minority-carrier lifetimes are measured by time-resolved photoluminescence. The data indicate that the minority-carrier lifetimes in high aluminum (x>0.30) AlxGa 1-xAs grown by MBE are comparable to the previously published lifetimes of material grown by liquid-phase epitaxy. The lifetimes in MBE materials appear to be somewhat larger than those measured in materials grown by metalorganic chemical vapor deposition. Factors affecting AlGaAs minority-carrier lifetime, such as the growth temperature, the aluminum concentration, and the confinement layer composition will be discussed.",

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note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois",

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AU - Ahrenkiel, R. K.

AU - Keyes, B. M.

AU - Shen, T. C.

AU - Chyi, J. I.

AU - Morkoc, H.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois

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N2 - AlxGa1-xAs (x>0.30) double heterostructures are grown by molecular-beam epitaxy (MBE) and the minority-carrier lifetimes are measured by time-resolved photoluminescence. The data indicate that the minority-carrier lifetimes in high aluminum (x>0.30) AlxGa 1-xAs grown by MBE are comparable to the previously published lifetimes of material grown by liquid-phase epitaxy. The lifetimes in MBE materials appear to be somewhat larger than those measured in materials grown by metalorganic chemical vapor deposition. Factors affecting AlGaAs minority-carrier lifetime, such as the growth temperature, the aluminum concentration, and the confinement layer composition will be discussed.

AB - AlxGa1-xAs (x>0.30) double heterostructures are grown by molecular-beam epitaxy (MBE) and the minority-carrier lifetimes are measured by time-resolved photoluminescence. The data indicate that the minority-carrier lifetimes in high aluminum (x>0.30) AlxGa 1-xAs grown by MBE are comparable to the previously published lifetimes of material grown by liquid-phase epitaxy. The lifetimes in MBE materials appear to be somewhat larger than those measured in materials grown by metalorganic chemical vapor deposition. Factors affecting AlGaAs minority-carrier lifetime, such as the growth temperature, the aluminum concentration, and the confinement layer composition will be discussed.

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Minority-Carrier Lifetime in AlxGa1-xAs Grown by Molecular-Beam Epitaxy

Abstract

Bibliographical note

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