Minority-Carrier Lifetime in GaAs Thin Films

R. K. Ahrenkiel; D. J. Dunlavy; J. Benner; R. P. Gale; R. W. McClelland; J. V. Gormley; B. D. King

doi:10.1063/1.99867

Minority-Carrier Lifetime in GaAs Thin Films

R. K. Ahrenkiel, D. J. Dunlavy, J. Benner, R. P. Gale, R. W. McClelland, J. V. Gormley, B. D. King

Materials Science

Research output: Contribution to journal › Article › peer-review

15 Scopus Citations

Abstract

Double-heterostructure devices of type Al_xGa_1-xAs/ GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×10 ¹⁶ cm^-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.

Original language	American English
Pages (from-to)	598-599
Number of pages	2
Journal	Applied Physics Letters
Volume	53
Issue number	7
DOIs	https://doi.org/10.1063/1.99867 https://doi.org/10.1063/1.99867
State	Published - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Kopin Corporation, Taunton, Massachusetts

NREL Publication Number

ACNR/JA-213-10483

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Cite this

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abstract = "Double-heterostructure devices of type AlxGa1-xAs/ GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×10 16 cm-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.",

author = "Ahrenkiel, {R. K.} and Dunlavy, {D. J.} and J. Benner and Gale, {R. P.} and McClelland, {R. W.} and Gormley, {J. V.} and King, {B. D.}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Kopin Corporation, Taunton, Massachusetts",

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doi = "10.1063/1.99867",

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journal = "Applied Physics Letters",

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AU - Ahrenkiel, R. K.

AU - Dunlavy, D. J.

AU - Benner, J.

AU - Gale, R. P.

AU - McClelland, R. W.

AU - Gormley, J. V.

AU - King, B. D.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Kopin Corporation, Taunton, Massachusetts

PY - 1988

Y1 - 1988

N2 - Double-heterostructure devices of type AlxGa1-xAs/ GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×10 16 cm-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.

AB - Double-heterostructure devices of type AlxGa1-xAs/ GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×10 16 cm-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.

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U2 - 10.1063/1.99867

DO - 10.1063/1.99867

M3 - Article

AN - SCOPUS:11744368933

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EP - 599

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Minority-Carrier Lifetime in GaAs Thin Films

Abstract

Bibliographical note

NREL Publication Number

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