Minority-Carrier Lifetime in GaAs Thin Films

R. K. Ahrenkiel, D. J. Dunlavy, J. Benner, R. P. Gale, R. W. McClelland, J. V. Gormley, B. D. King

Research output: Contribution to journalArticlepeer-review

15 Scopus Citations


Double-heterostructure devices of type AlxGa1-xAs/ GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×10 16 cm-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.

Original languageAmerican English
Pages (from-to)598-599
Number of pages2
JournalApplied Physics Letters
Issue number7
StatePublished - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Kopin Corporation, Taunton, Massachusetts

NREL Publication Number

  • ACNR/JA-213-10483


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