Minority-Carrier Lifetime in GaAs Thin Films

R. K. Ahrenkiel; D. J. Dunlavy; J. Benner; R. P. Gale; R. W. McClelland; J. V. Gormley; B. D. King

doi:10.1063/1.99867

Minority-Carrier Lifetime in GaAs Thin Films

R. K. Ahrenkiel, D. J. Dunlavy, J. Benner, R. P. Gale, R. W. McClelland, J. V. Gormley, B. D. King

Materials Science

Research output: Contribution to journal › Article › peer-review

15 Scopus Citations

Abstract

Double-heterostructure devices of type Al_xGa_1-xAs/ GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×10 ¹⁶ cm^-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.

Original language	American English
Pages (from-to)	598-599
Number of pages	2
Journal	Applied Physics Letters
Volume	53
Issue number	7
DOIs	https://doi.org/10.1063/1.99867 https://doi.org/10.1063/1.99867
State	Published - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Kopin Corporation, Taunton, Massachusetts

NREL Publication Number

ACNR/JA-213-10483

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title = "Minority-Carrier Lifetime in GaAs Thin Films",

abstract = "Double-heterostructure devices of type AlxGa1-xAs/ GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×10 16 cm-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.",

author = "Ahrenkiel, \{R. K.\} and Dunlavy, \{D. J.\} and J. Benner and Gale, \{R. P.\} and McClelland, \{R. W.\} and Gormley, \{J. V.\} and King, \{B. D.\}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Kopin Corporation, Taunton, Massachusetts",

year = "1988",

doi = "10.1063/1.99867",

language = "American English",

volume = "53",

pages = "598--599",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Minority-Carrier Lifetime in GaAs Thin Films

AU - Ahrenkiel, R. K.

AU - Dunlavy, D. J.

AU - Benner, J.

AU - Gale, R. P.

AU - McClelland, R. W.

AU - Gormley, J. V.

AU - King, B. D.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Kopin Corporation, Taunton, Massachusetts

PY - 1988

Y1 - 1988

N2 - Double-heterostructure devices of type AlxGa1-xAs/ GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×10 16 cm-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.

AB - Double-heterostructure devices of type AlxGa1-xAs/ GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×10 16 cm-3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.

UR - https://www.scopus.com/pages/publications/11744368933

U2 - 10.1063/1.99867

DO - 10.1063/1.99867

M3 - Article

AN - SCOPUS:11744368933

SN - 0003-6951

VL - 53

SP - 598

EP - 599

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Minority-Carrier Lifetime in GaAs Thin Films

Abstract

Bibliographical note

NREL Publication Number

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