Minority-Carrier Lifetime in ITO/InP Heterojunctions

R. K. Ahrenkiel, D. J. Dunlavy, T. Hanak

Research output: Contribution to journalArticlepeer-review

23 Scopus Citations


The relationship between photoluminescence lifetime and minority-carrier lifetime is derived for window/absorber heterojunctions by the method of Laplace transforms. The model includes the effects of diffusion to the depletion region and self-absorption of the emitted radiation. The model is applied to InP photoluminescence generated by pulsed laser excitation of indium-tin-oxide (ITO)/InP heterojunctions. The photoluminescence lifetime of a device with NA=1×1016 cm-3 is about 21 ns. The bulk lifetime of the device can be fit with a lifetime of about 30 ns. The lifetime in the unprocessed substrate exceeds 200 ns indicating that recombination is induced by ITO processing.

Original languageAmerican English
Pages (from-to)1916-1921
Number of pages6
JournalJournal of Applied Physics
Issue number4
StatePublished - 1988

NREL Publication Number

  • ACNR/JA-213-10482


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