Minority-Carrier Lifetime in ITO/InP Heterojunctions

R. K. Ahrenkiel; D. J. Dunlavy; T. Hanak

doi:10.1063/1.341743

Minority-Carrier Lifetime in ITO/InP Heterojunctions

R. K. Ahrenkiel, D. J. Dunlavy, T. Hanak

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

23 Scopus Citations

Abstract

The relationship between photoluminescence lifetime and minority-carrier lifetime is derived for window/absorber heterojunctions by the method of Laplace transforms. The model includes the effects of diffusion to the depletion region and self-absorption of the emitted radiation. The model is applied to InP photoluminescence generated by pulsed laser excitation of indium-tin-oxide (ITO)/InP heterojunctions. The photoluminescence lifetime of a device with N_A=1×10¹⁶ cm^-3 is about 21 ns. The bulk lifetime of the device can be fit with a lifetime of about 30 ns. The lifetime in the unprocessed substrate exceeds 200 ns indicating that recombination is induced by ITO processing.

Original language	American English
Pages (from-to)	1916-1921
Number of pages	6
Journal	Journal of Applied Physics
Volume	64
Issue number	4
DOIs	https://doi.org/10.1063/1.341743 https://doi.org/10.1063/1.341743
State	Published - 1988

NREL Publication Number

ACNR/JA-213-10482

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title = "Minority-Carrier Lifetime in ITO/InP Heterojunctions",

abstract = "The relationship between photoluminescence lifetime and minority-carrier lifetime is derived for window/absorber heterojunctions by the method of Laplace transforms. The model includes the effects of diffusion to the depletion region and self-absorption of the emitted radiation. The model is applied to InP photoluminescence generated by pulsed laser excitation of indium-tin-oxide (ITO)/InP heterojunctions. The photoluminescence lifetime of a device with NA=1×1016 cm-3 is about 21 ns. The bulk lifetime of the device can be fit with a lifetime of about 30 ns. The lifetime in the unprocessed substrate exceeds 200 ns indicating that recombination is induced by ITO processing.",

author = "Ahrenkiel, {R. K.} and Dunlavy, {D. J.} and T. Hanak",

year = "1988",

doi = "10.1063/1.341743",

language = "American English",

volume = "64",

pages = "1916--1921",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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AU - Ahrenkiel, R. K.

AU - Dunlavy, D. J.

AU - Hanak, T.

PY - 1988

Y1 - 1988

N2 - The relationship between photoluminescence lifetime and minority-carrier lifetime is derived for window/absorber heterojunctions by the method of Laplace transforms. The model includes the effects of diffusion to the depletion region and self-absorption of the emitted radiation. The model is applied to InP photoluminescence generated by pulsed laser excitation of indium-tin-oxide (ITO)/InP heterojunctions. The photoluminescence lifetime of a device with NA=1×1016 cm-3 is about 21 ns. The bulk lifetime of the device can be fit with a lifetime of about 30 ns. The lifetime in the unprocessed substrate exceeds 200 ns indicating that recombination is induced by ITO processing.

AB - The relationship between photoluminescence lifetime and minority-carrier lifetime is derived for window/absorber heterojunctions by the method of Laplace transforms. The model includes the effects of diffusion to the depletion region and self-absorption of the emitted radiation. The model is applied to InP photoluminescence generated by pulsed laser excitation of indium-tin-oxide (ITO)/InP heterojunctions. The photoluminescence lifetime of a device with NA=1×1016 cm-3 is about 21 ns. The bulk lifetime of the device can be fit with a lifetime of about 30 ns. The lifetime in the unprocessed substrate exceeds 200 ns indicating that recombination is induced by ITO processing.

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U2 - 10.1063/1.341743

DO - 10.1063/1.341743

M3 - Article

AN - SCOPUS:0012498885

SN - 0021-8979

VL - 64

SP - 1916

EP - 1921

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Minority-Carrier Lifetime in ITO/InP Heterojunctions

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