Minority Carrier Lifetime in n-A10.38Ga0.62As

R. K. Ahrenkiel, D. J. Dunlavy, R. Y. Loo, G. S. Kamath

Research output: Contribution to journalArticlepeer-review

11 Scopus Citations


The minority-carrier lifetime in n-Al0.38Ga0.62As has been investigated by laser-induced photoluminescence. A variety of device structures were used to reduce interface recombination effects, including double heterostructures. Bulk lifetimes of about 18 ns were seen at doping levels of 1×1016 cm-3 or less. These data suggest that minority-carrier devices are feasible in high aluminum AlGaAs, contrary to the suggestion of earlier work.

Original languageAmerican English
Pages (from-to)5174-5176
Number of pages3
JournalJournal of Applied Physics
Issue number10
StatePublished - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Hughes Research Laboratories, Malibu, California

NREL Publication Number

  • ACNR/JA-213-9504


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