Minority Carrier Lifetime in n-A10.38Ga0.62As

R. K. Ahrenkiel; D. J. Dunlavy; R. Y. Loo; G. S. Kamath

doi:10.1063/1.340423

Minority Carrier Lifetime in n-A10.38Ga0.62As

R. K. Ahrenkiel, D. J. Dunlavy, R. Y. Loo, G. S. Kamath

Materials Science

Research output: Contribution to journal › Article › peer-review

11 Scopus Citations

Abstract

The minority-carrier lifetime in n-Al_0.38Ga_0.62As has been investigated by laser-induced photoluminescence. A variety of device structures were used to reduce interface recombination effects, including double heterostructures. Bulk lifetimes of about 18 ns were seen at doping levels of 1×10¹⁶ cm^-3 or less. These data suggest that minority-carrier devices are feasible in high aluminum AlGaAs, contrary to the suggestion of earlier work.

Original language	American English
Pages (from-to)	5174-5176
Number of pages	3
Journal	Journal of Applied Physics
Volume	63
Issue number	10
DOIs	https://doi.org/10.1063/1.340423 https://doi.org/10.1063/1.340423
State	Published - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Hughes Research Laboratories, Malibu, California

NREL Publication Number

ACNR/JA-213-9504

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abstract = "The minority-carrier lifetime in n-Al0.38Ga0.62As has been investigated by laser-induced photoluminescence. A variety of device structures were used to reduce interface recombination effects, including double heterostructures. Bulk lifetimes of about 18 ns were seen at doping levels of 1×1016 cm-3 or less. These data suggest that minority-carrier devices are feasible in high aluminum AlGaAs, contrary to the suggestion of earlier work.",

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AU - Dunlavy, D. J.

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AU - Kamath, G. S.

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N2 - The minority-carrier lifetime in n-Al0.38Ga0.62As has been investigated by laser-induced photoluminescence. A variety of device structures were used to reduce interface recombination effects, including double heterostructures. Bulk lifetimes of about 18 ns were seen at doping levels of 1×1016 cm-3 or less. These data suggest that minority-carrier devices are feasible in high aluminum AlGaAs, contrary to the suggestion of earlier work.

AB - The minority-carrier lifetime in n-Al0.38Ga0.62As has been investigated by laser-induced photoluminescence. A variety of device structures were used to reduce interface recombination effects, including double heterostructures. Bulk lifetimes of about 18 ns were seen at doping levels of 1×1016 cm-3 or less. These data suggest that minority-carrier devices are feasible in high aluminum AlGaAs, contrary to the suggestion of earlier work.

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U2 - 10.1063/1.340423

DO - 10.1063/1.340423

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Minority Carrier Lifetime in n-A10.38Ga0.62As

Abstract

Bibliographical note

NREL Publication Number

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