Minority Carrier Lifetime of GaAs on Silicon

R. K. Ahrenkiel, M. M. Al-Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S. P. Tobin, V. E. Haven

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations


AlGaAs/GaAs double heterostructures were grown on heteroepitaxial GaAs/Si layers by metal-organic chemical vapor deposition. These test devices were subsequently characterized by photoluminescence and transmission electron microscopy. The minority carrier lifetimes were found to be limited by recombination at mismatch dislocations. An inverse correlation between dislocation density and minority carrier lifetime was observed. The use of thick (8 μm) GaAs buffer layers in conjunction with thermal annealing of these structures reduced the dislocation density by about an order of magnitude. The minority carrier lifetime in these buffered heterostructures increased from 0.1 to 2 ns.

Original languageAmerican English
Number of pages5
StatePublished - 1988
EventTwentieth IEEE Photovoltaic Specialists Conference - 1988 - Las Vegas, NV, USA
Duration: 26 Sep 198830 Sep 1988


ConferenceTwentieth IEEE Photovoltaic Specialists Conference - 1988
CityLas Vegas, NV, USA

NREL Publication Number

  • ACNR/CP-213-11111


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