Minority Carrier Lifetime of GaAs on Silicon

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	996-1000
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	137
Issue number	3
DOIs	https://doi.org/10.1149/1.2086595
State	Published - 1990

Work performed by Solar Energy Research Institute, Golden, Colorado and Spire Corporation, Bedford, Massachusetts

NREL Publication Number

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title = "Minority Carrier Lifetime of GaAs on Silicon",

author = "NREL",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado and Spire Corporation, Bedford, Massachusetts",

year = "1990",

doi = "10.1149/1.2086595",

language = "American English",

volume = "137",

pages = "996--1000",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "3",

}

TY - JOUR

T1 - Minority Carrier Lifetime of GaAs on Silicon

AU - NREL, null

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado and Spire Corporation, Bedford, Massachusetts

PY - 1990

Y1 - 1990

U2 - 10.1149/1.2086595

DO - 10.1149/1.2086595

M3 - Article

SN - 0013-4651

VL - 137

SP - 996

EP - 1000

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -