Minority Carrier Lifetimes in 1.0-eV p-In0.27Ga0.73As Layers Grown on GaAs Substrates

Rao Tatavarti; Keun Yong Ban; Andree Wibowo; Darius Kuciauskas; Harvey Guthrey; Kim Jones; Steve Johnston; Andrew Norman; Dean Levi; Mowafak Al-Jassim

doi:10.1109/PVSC.2014.6925664

Minority Carrier Lifetimes in 1.0-eV p-In0.27Ga0.73As Layers Grown on GaAs Substrates

Rao Tatavarti, Keun Yong Ban, Andree Wibowo, Darius Kuciauskas, Harvey Guthrey, Kim Jones, Steve Johnston, Andrew Norman, Dean Levi, Mowafak Al-Jassim

Research output: Contribution to conference › Paper › peer-review

Abstract

Time-resolved photoluminescence (TRPL) measurements indicated minority carrier lifetimes of 15 ns for electrons in 2-μm thick layers of 1.0-eV p-In_0.27Ga_0.73As grown on 6-inch GaAs wafers. Electron lifetimes increased from 10 ns to 15 ns as the thickness of 1.0-eV p-In_0.27Ga_0.73As was increased from 0.5 μm to 2 μm. The electron lifetimes decreased from 15 ns for a p-In_xGa_1-xAs with a doping density of 1×10¹⁷ cm^-3 to 5 ns for a doping density of 5×10¹⁷ cm³. Cathodoluminescence imaging measurements indicated dislocation densities of 7.9×10⁵ cm^-2 for a 1.0-μm thick layer of p-In_0.27Ga_0.73As (1.0eV) at the center of the wafer and 1.4×10⁶ cm^-2 towards the edge. Cross-section transmission electron microscopy studies were performed to study dislocation blocking and threading dislocation propagation through the metamorphic graded AllnGaAs layers.

Original language	American English
Pages	3414-3416
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2014.6925664 https://doi.org/10.1109/PVSC.2014.6925664
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5J00-63759

Keywords

carrier lifetime
cathodoluminescence
InGaAs
metamorphic layers
photoluminescence
photovoltaic cells
TEM

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Tatavarti, R., Ban, K. Y., Wibowo, A., Kuciauskas, D., Guthrey, H., Jones, K., Johnston, S., Norman, A., Levi, D., & Al-Jassim, M. (2014). Minority Carrier Lifetimes in 1.0-eV p-In0.27Ga0.73As Layers Grown on GaAs Substrates. 3414-3416. Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States. https://doi.org/10.1109/PVSC.2014.6925664, https://doi.org/10.1109/PVSC.2014.6925664

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title = "Minority Carrier Lifetimes in 1.0-eV p-In0.27Ga0.73As Layers Grown on GaAs Substrates",

abstract = "Time-resolved photoluminescence (TRPL) measurements indicated minority carrier lifetimes of 15 ns for electrons in 2-μm thick layers of 1.0-eV p-In0.27Ga0.73As grown on 6-inch GaAs wafers. Electron lifetimes increased from 10 ns to 15 ns as the thickness of 1.0-eV p-In0.27Ga0.73As was increased from 0.5 μm to 2 μm. The electron lifetimes decreased from 15 ns for a p-InxGa1-xAs with a doping density of 1×1017 cm-3 to 5 ns for a doping density of 5×1017 cm3. Cathodoluminescence imaging measurements indicated dislocation densities of 7.9×105 cm-2 for a 1.0-μm thick layer of p-In0.27Ga0.73As (1.0eV) at the center of the wafer and 1.4×106 cm-2 towards the edge. Cross-section transmission electron microscopy studies were performed to study dislocation blocking and threading dislocation propagation through the metamorphic graded AllnGaAs layers.",

keywords = "carrier lifetime, cathodoluminescence, InGaAs, metamorphic layers, photoluminescence, photovoltaic cells, TEM",

author = "Rao Tatavarti and Ban, {Keun Yong} and Andree Wibowo and Darius Kuciauskas and Harvey Guthrey and Kim Jones and Steve Johnston and Andrew Norman and Dean Levi and Mowafak Al-Jassim",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

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doi = "10.1109/PVSC.2014.6925664",

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Tatavarti, R, Ban, KY, Wibowo, A, Kuciauskas, D , Guthrey, H, Jones, K, Johnston, S , Norman, A, Levi, D & Al-Jassim, M 2014, 'Minority Carrier Lifetimes in 1.0-eV p-In0.27Ga0.73As Layers Grown on GaAs Substrates', Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14 - 13/06/14 pp. 3414-3416. https://doi.org/10.1109/PVSC.2014.6925664, https://doi.org/10.1109/PVSC.2014.6925664

TY - CONF

T1 - Minority Carrier Lifetimes in 1.0-eV p-In0.27Ga0.73As Layers Grown on GaAs Substrates

AU - Tatavarti, Rao

AU - Ban, Keun Yong

AU - Wibowo, Andree

AU - Kuciauskas, Darius

AU - Guthrey, Harvey

AU - Jones, Kim

AU - Johnston, Steve

AU - Norman, Andrew

AU - Levi, Dean

AU - Al-Jassim, Mowafak

PY - 2014/10/15

Y1 - 2014/10/15

N2 - Time-resolved photoluminescence (TRPL) measurements indicated minority carrier lifetimes of 15 ns for electrons in 2-μm thick layers of 1.0-eV p-In0.27Ga0.73As grown on 6-inch GaAs wafers. Electron lifetimes increased from 10 ns to 15 ns as the thickness of 1.0-eV p-In0.27Ga0.73As was increased from 0.5 μm to 2 μm. The electron lifetimes decreased from 15 ns for a p-InxGa1-xAs with a doping density of 1×1017 cm-3 to 5 ns for a doping density of 5×1017 cm3. Cathodoluminescence imaging measurements indicated dislocation densities of 7.9×105 cm-2 for a 1.0-μm thick layer of p-In0.27Ga0.73As (1.0eV) at the center of the wafer and 1.4×106 cm-2 towards the edge. Cross-section transmission electron microscopy studies were performed to study dislocation blocking and threading dislocation propagation through the metamorphic graded AllnGaAs layers.

AB - Time-resolved photoluminescence (TRPL) measurements indicated minority carrier lifetimes of 15 ns for electrons in 2-μm thick layers of 1.0-eV p-In0.27Ga0.73As grown on 6-inch GaAs wafers. Electron lifetimes increased from 10 ns to 15 ns as the thickness of 1.0-eV p-In0.27Ga0.73As was increased from 0.5 μm to 2 μm. The electron lifetimes decreased from 15 ns for a p-InxGa1-xAs with a doping density of 1×1017 cm-3 to 5 ns for a doping density of 5×1017 cm3. Cathodoluminescence imaging measurements indicated dislocation densities of 7.9×105 cm-2 for a 1.0-μm thick layer of p-In0.27Ga0.73As (1.0eV) at the center of the wafer and 1.4×106 cm-2 towards the edge. Cross-section transmission electron microscopy studies were performed to study dislocation blocking and threading dislocation propagation through the metamorphic graded AllnGaAs layers.

KW - carrier lifetime

KW - cathodoluminescence

KW - InGaAs

KW - metamorphic layers

KW - photoluminescence

KW - photovoltaic cells

KW - TEM

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DO - 10.1109/PVSC.2014.6925664

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SP - 3414

EP - 3416

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Minority Carrier Lifetimes in 1.0-eV p-In0.27Ga0.73As Layers Grown on GaAs Substrates

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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