Minority Carrier Lifetimes in 1.0-eV p-In0.27Ga0.73As Layers Grown on GaAs Substrates

Rao Tatavarti, Keun Yong Ban, Andree Wibowo, Darius Kuciauskas, Harvey Guthrey, Kim Jones, Steve Johnston, Andrew Norman, Dean Levi, Mowafak Al-Jassim

Research output: Contribution to conferencePaperpeer-review


Time-resolved photoluminescence (TRPL) measurements indicated minority carrier lifetimes of 15 ns for electrons in 2-μm thick layers of 1.0-eV p-In0.27Ga0.73As grown on 6-inch GaAs wafers. Electron lifetimes increased from 10 ns to 15 ns as the thickness of 1.0-eV p-In0.27Ga0.73As was increased from 0.5 μm to 2 μm. The electron lifetimes decreased from 15 ns for a p-InxGa1-xAs with a doping density of 1×1017 cm-3 to 5 ns for a doping density of 5×1017 cm3. Cathodoluminescence imaging measurements indicated dislocation densities of 7.9×105 cm-2 for a 1.0-μm thick layer of p-In0.27Ga0.73As (1.0eV) at the center of the wafer and 1.4×106 cm-2 towards the edge. Cross-section transmission electron microscopy studies were performed to study dislocation blocking and threading dislocation propagation through the metamorphic graded AllnGaAs layers.

Original languageAmerican English
Number of pages3
StatePublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014


Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

  • NREL/CP-5J00-63759


  • carrier lifetime
  • cathodoluminescence
  • InGaAs
  • metamorphic layers
  • photoluminescence
  • photovoltaic cells
  • TEM


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