Minority Carrier Properties of GaAs on Silicon

R. K. Ahrenkiel; M. M. Al-Jassim; D. J. Dunlavy; K. M. Jones; S. M. Vernon; S. P. Tobin; V. E. Haven

doi:10.1063/1.100137

Minority Carrier Properties of GaAs on Silicon

R. K. Ahrenkiel, M. M. Al-Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S. P. Tobin, V. E. Haven

Materials Science

Research output: Contribution to journal › Article › peer-review

21 Scopus Citations

Abstract

The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.

Original language	American English
Pages (from-to)	222-224
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	3
DOIs	https://doi.org/10.1063/1.100137 https://doi.org/10.1063/1.100137
State	Published - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Spire Corporation, Bedford, Massachusetts

NREL Publication Number

ACNR/JA-213-10223

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Cite this

@article{ac37c97ba9d04b0d9a227cf4ae738bfd,

title = "Minority Carrier Properties of GaAs on Silicon",

abstract = "The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.",

author = "Ahrenkiel, {R. K.} and Al-Jassim, {M. M.} and Dunlavy, {D. J.} and Jones, {K. M.} and Vernon, {S. M.} and Tobin, {S. P.} and Haven, {V. E.}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Spire Corporation, Bedford, Massachusetts",

year = "1988",

doi = "10.1063/1.100137",

language = "American English",

volume = "53",

pages = "222--224",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Minority Carrier Properties of GaAs on Silicon

AU - Ahrenkiel, R. K.

AU - Al-Jassim, M. M.

AU - Dunlavy, D. J.

AU - Jones, K. M.

AU - Vernon, S. M.

AU - Tobin, S. P.

AU - Haven, V. E.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Spire Corporation, Bedford, Massachusetts

PY - 1988

Y1 - 1988

N2 - The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.

AB - The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.

UR - http://www.scopus.com/inward/record.url?scp=0346714522&partnerID=8YFLogxK

U2 - 10.1063/1.100137

DO - 10.1063/1.100137

M3 - Article

AN - SCOPUS:0346714522

SN - 0003-6951

VL - 53

SP - 222

EP - 224

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Minority Carrier Properties of GaAs on Silicon

Abstract

Bibliographical note

NREL Publication Number

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