Minority Carrier Properties of GaAs on Silicon

R. K. Ahrenkiel, M. M. Al-Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S. P. Tobin, V. E. Haven

Research output: Contribution to journalArticlepeer-review

21 Scopus Citations


The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.

Original languageAmerican English
Pages (from-to)222-224
Number of pages3
JournalApplied Physics Letters
Issue number3
StatePublished - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Spire Corporation, Bedford, Massachusetts

NREL Publication Number

  • ACNR/JA-213-10223


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