Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa

Abigail Meyer; Vincenzo LaSalvia; William Nemeth; Matthew Page; Pauls Stradins; Sumit Agarwal

doi:10.1109/PVSC40753.2019.8981248

Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa

Abigail Meyer, Vincenzo LaSalvia, William Nemeth, Matthew Page, Pauls Stradins, Sumit Agarwal

Chemistry and Nanoscience

Colorado School of Mines

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.

Original language	American English
Pages	68-71
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC40753.2019.8981248 https://doi.org/10.1109/PVSC40753.2019.8981248
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5900-73149

Keywords

Index Terms - process-induced degradation
light-induced degradation
silicon
Tabula Rasa

Access to Document

Cite this

Meyer, A., LaSalvia, V., Nemeth, W., Page, M., Stradins, P., & Agarwal, S. (2019). Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa. 68-71. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. https://doi.org/10.1109/PVSC40753.2019.8981248, https://doi.org/10.1109/PVSC40753.2019.8981248

@conference{ccb8f6b6e26a4a6797b42a71e8b26dbe,

title = "Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa",

abstract = "We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.",

keywords = "Index Terms - process-induced degradation, light-induced degradation, silicon, Tabula Rasa",

author = "Abigail Meyer and Vincenzo LaSalvia and William Nemeth and Matthew Page and Pauls Stradins and Sumit Agarwal",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8981248",

language = "American English",

pages = "68--71",

}

Meyer, A, LaSalvia, V, Nemeth, W , Page, M , Stradins, P & Agarwal, S 2019, 'Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 68-71. https://doi.org/10.1109/PVSC40753.2019.8981248, https://doi.org/10.1109/PVSC40753.2019.8981248

TY - CONF

T1 - Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa

AU - Meyer, Abigail

AU - LaSalvia, Vincenzo

AU - Nemeth, William

AU - Page, Matthew

AU - Stradins, Pauls

AU - Agarwal, Sumit

PY - 2019/6

Y1 - 2019/6

N2 - We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.

AB - We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.

KW - Index Terms - process-induced degradation

KW - light-induced degradation

KW - silicon

KW - Tabula Rasa

UR - http://www.scopus.com/inward/record.url?scp=85081619647&partnerID=8YFLogxK

U2 - 10.1109/PVSC40753.2019.8981248

DO - 10.1109/PVSC40753.2019.8981248

M3 - Paper

AN - SCOPUS:85081619647

SP - 68

EP - 71

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this