Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa

Abigail Meyer, Vincenzo LaSalvia, William Nemeth, Matthew Page, Pauls Stradins, Sumit Agarwal, Sumit Agarwal

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations

Abstract

We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.

Original languageAmerican English
Pages68-71
Number of pages4
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period16/06/1921/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

  • NREL/CP-5900-73149

Keywords

  • Index Terms - process-induced degradation
  • light-induced degradation
  • silicon
  • Tabula Rasa

Fingerprint

Dive into the research topics of 'Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa'. Together they form a unique fingerprint.

Cite this