Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa: Preprint

Abigail Meyer; Vincenzo LaSalvia; William Nemeth; Matthew Page; David Young; Pauls Stradins; Sumit Agarwal

Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa: Preprint

Abigail Meyer, Vincenzo LaSalvia, William Nemeth, Matthew Page, David Young, Pauls Stradins, Sumit Agarwal

Chemistry and Nanoscience

Colorado School of Mines

Research output: Contribution to conference › Paper

Abstract

We report on the bulk properties of of n- and p-type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.

Original language	American English
Number of pages	6
State	Published - 2019
Event	46th IEEE Photovoltaic Specialists Conference (PVSC 46) - Chicago, Illinois Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference (PVSC 46)
City	Chicago, Illinois
Period	16/06/19 → 21/06/19

NREL Publication Number

NREL/CP-5900-74027

Keywords

light-induced degradation
process-induced degradation
silicon
Tabula Rasa

Access to Document

https://www.nrel.gov/docs/fy19osti/74027.pdf

Cite this

@conference{49a01f98adc345f887c6a0b70dc152d3,

title = "Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa: Preprint",

abstract = "We report on the bulk properties of of n- and p-type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.",

keywords = "light-induced degradation, process-induced degradation, silicon, Tabula Rasa",

author = "Abigail Meyer and Vincenzo LaSalvia and William Nemeth and Matthew Page and David Young and Pauls Stradins and Sumit Agarwal",

year = "2019",

language = "American English",

note = "46th IEEE Photovoltaic Specialists Conference (PVSC 46) ; Conference date: 16-06-2019 Through 21-06-2019",

}

TY - CONF

T1 - Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa: Preprint

AU - Meyer, Abigail

AU - LaSalvia, Vincenzo

AU - Nemeth, William

AU - Page, Matthew

AU - Young, David

AU - Stradins, Pauls

AU - Agarwal, Sumit

PY - 2019

Y1 - 2019

N2 - We report on the bulk properties of of n- and p-type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.

AB - We report on the bulk properties of of n- and p-type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.

KW - light-induced degradation

KW - process-induced degradation

KW - silicon

KW - Tabula Rasa

M3 - Paper

T2 - 46th IEEE Photovoltaic Specialists Conference (PVSC 46)

Y2 - 16 June 2019 through 21 June 2019

ER -

Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa: Preprint

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this