MOCVD Growth and Optical Characterization of Strain-Induced Quantum Dots with InP Island Stressors

Engineering

• Aluminium Gallium Arsenide 50%
• Atomic Force Microscopy 50%
• Fairly Uniform Distribution 50%
• Gallium Arsenide 50%
• Growth Condition 50%
• Growth Temperature 50%
• Line Width 50%
• Metal Organic Chemical Vapor Deposition 100%
• Quantum Dot 100%
• Quantum Well 50%
• Room Temperature 50%

Material Science

• Aluminium Gallium Arsenide 50%
• Atomic Force Microscopy 50%
• Gallium Arsenide 50%
• Linewidth 50%
• Metal-Organic Chemical Vapor Deposition 100%
• Photoluminescence 50%
• Quantum Dot 100%
• Quantum Well 50%
• Surface (Surface Science) 50%

Chemical Engineering

• Aluminum Gallium Arsenide 50%
• Chemical Vapor Deposition 100%
• Growth Temperature 50%
• Vapor Deposition 100%