MOCVD Growth and Properties of Zn3P2 and Cd3P2 Films for Thermal Photovoltaic Applications

A. M. Hermann, Arun Madan, M. W. Wanlass, V. Badri, R. Ahrenkiel, Scott Morrison, Carlos Gonzalez

Research output: Contribution to journalArticlepeer-review

29 Scopus Citations


We report the growth and characterization (structural and electronic) of thin films of Zn3P2 and Cd3P2 grown by MOCVD. Heterojunctions of this pair of dopable semiconductors are being studied for applications as thermophotovoltaic devices. We have grown films of these materials on glass substrates, and X-ray diffaction studies confirm the phase formation and polycrystalline nature of the films. Optical absorption studies revealed three distinct transitions in the Zn3P2 films, at 1.3, 1.55, and 1.85eV (in agreement with literature values found in single crystals). Analysis of optical spectra of the films showed direct transitions at 0.62, 0.65, and 0.71eV. We also report measurements of photoconductivity and photoluminescence in these films. Hall effect measurements show the Cd3P2 films to be n-type with mobilities as high as 429cm2/Vs. Carrier lifetimes were also measured directly by a photoconductive decay technique. The films show promise for TPV devices, although fabrication of such multilayer devices is in only a preliminary stage.

Original languageAmerican English
Pages (from-to)241-252
Number of pages12
JournalSolar Energy Materials and Solar Cells
Issue number1-2
StatePublished - 1 May 2004
EventCancun 2003 - Cancun, Mexico
Duration: 17 Aug 200321 Aug 2003

NREL Publication Number

  • NREL/JA-520-36461


  • Absorption studies
  • Heterojunction


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