MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine

Sarah R. Kurtz; J. M. Olson; A. Kibbler

doi:10.1007/BF02655338

MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine

Sarah R. Kurtz, J. M. Olson, A. Kibbler

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

19 Scopus Citations

Abstract

Tertiarybutylphosphine was explored as a safer alternative to phosphine for the atmospheric pressure chemical vapor deposition of Ga_0.52In_0.48P on GaAs. For V/III ratios greater than or equal to 50 and growth temperatures between 630 and 700° C, the minority carrier diffusion length of Ga_0.52In_0.48P grown from t-butylphosphine, approached that of Ga_0.52In_0.48P grown from phosphine under similar conditions. Compared to deposition with phosphine, with t-butylphosphine the surface morphology was rougher, the carbon and sulfur contamination was greater, and the loss of indium by parasitic reaction was greater. The band gap of the Ga_0.52In_0.48P at fixed composition varied differently with V/III ratio.

Original language	American English
Pages (from-to)	15-18
Number of pages	4
Journal	Journal of Electronic Materials
Volume	18
Issue number	1
DOIs	https://doi.org/10.1007/BF02655338 https://doi.org/10.1007/BF02655338
State	Published - 1989

NREL Publication Number

ACNR/JA-212-11322

Keywords

GalnP
MOCVD
photocurrent spectroscopy
Tertiarybutylphosphine

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abstract = "Tertiarybutylphosphine was explored as a safer alternative to phosphine for the atmospheric pressure chemical vapor deposition of Ga0.52In0.48P on GaAs. For V/III ratios greater than or equal to 50 and growth temperatures between 630 and 700° C, the minority carrier diffusion length of Ga0.52In0.48P grown from t-butylphosphine, approached that of Ga0.52In0.48P grown from phosphine under similar conditions. Compared to deposition with phosphine, with t-butylphosphine the surface morphology was rougher, the carbon and sulfur contamination was greater, and the loss of indium by parasitic reaction was greater. The band gap of the Ga0.52In0.48P at fixed composition varied differently with V/III ratio.",

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T1 - MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine

AU - Kurtz, Sarah R.

AU - Olson, J. M.

AU - Kibbler, A.

PY - 1989

Y1 - 1989

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AB - Tertiarybutylphosphine was explored as a safer alternative to phosphine for the atmospheric pressure chemical vapor deposition of Ga0.52In0.48P on GaAs. For V/III ratios greater than or equal to 50 and growth temperatures between 630 and 700° C, the minority carrier diffusion length of Ga0.52In0.48P grown from t-butylphosphine, approached that of Ga0.52In0.48P grown from phosphine under similar conditions. Compared to deposition with phosphine, with t-butylphosphine the surface morphology was rougher, the carbon and sulfur contamination was greater, and the loss of indium by parasitic reaction was greater. The band gap of the Ga0.52In0.48P at fixed composition varied differently with V/III ratio.

KW - GalnP

KW - MOCVD

KW - photocurrent spectroscopy

KW - Tertiarybutylphosphine

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DO - 10.1007/BF02655338

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JO - Journal of Electronic Materials

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ER -

MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine

Abstract

NREL Publication Number

Keywords

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