MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine

Sarah R. Kurtz, J. M. Olson, A. Kibbler

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19 Scopus Citations


Tertiarybutylphosphine was explored as a safer alternative to phosphine for the atmospheric pressure chemical vapor deposition of Ga0.52In0.48P on GaAs. For V/III ratios greater than or equal to 50 and growth temperatures between 630 and 700° C, the minority carrier diffusion length of Ga0.52In0.48P grown from t-butylphosphine, approached that of Ga0.52In0.48P grown from phosphine under similar conditions. Compared to deposition with phosphine, with t-butylphosphine the surface morphology was rougher, the carbon and sulfur contamination was greater, and the loss of indium by parasitic reaction was greater. The band gap of the Ga0.52In0.48P at fixed composition varied differently with V/III ratio.

Original languageAmerican English
Pages (from-to)15-18
Number of pages4
JournalJournal of Electronic Materials
Issue number1
StatePublished - 1989

NREL Publication Number

  • ACNR/JA-212-11322


  • GalnP
  • photocurrent spectroscopy
  • Tertiarybutylphosphine


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