MOCVD Surface Preparation of V-Groove Si for III-V Growth: Article No.126843

Theresa Saenz, Manali Nandy, Agnieszka Paszuk, David Ostheimer, Juliane Koch, William McMahon, Jeramy Zimmerman, Thomas Hannappel, Emily Warren

Research output: Contribution to journalArticlepeer-review

1 Scopus Citations

Abstract

V-groove nanopatterning of Si substrates has recently demonstrated promise for achieving high-quality III-V-on-Si epitaxy while providing a lower-cost processing route than chemo-mechanical polishing to produce epi-ready planar wafers. A key factor in determining the crystalline quality of III-V buffer layers is the Si surface structure and its chemical composition. Unlike planar Si surfaces, the surfaces of V-grooves prior to growth have not been studied in detail. Here, we study the surface of V-groove Si prepared for GaP nucleation via X-ray photoelectron spectroscopy and low-energy electron diffraction. We identify several pretreatments, using both 830 and 1000 annealing under an As background pressure, as being suitable for deoxidizing and cleaning the V-groove Si surface. The V-groove Si was found to behave similarly to reference Si(0 0 1) and Si(1 1 1) planar samples, demonstrating that in situ techniques such as reflection anisotropy spectroscopy can be used on reference samples to infer the state of the V-groove surface, and indicating that the extensive research on planar Si surfaces can be directly applied to V-grooves.
Original languageAmerican English
Number of pages6
JournalJournal of Crystal Growth
Volume597
DOIs
StatePublished - 2022

NREL Publication Number

  • NREL/JA-5900-81690

Keywords

  • III-V epitaxy
  • MOCVD
  • nanopatterning
  • photovoltaic
  • PV
  • solar cells
  • V-grooves

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