Model for Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P

Sarah R. Kurtz, J. M. Olson, A. E. Kibbler, S. Asher

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2 Scopus Citations


Data are presented for the Zn doping of Ga0.5ln0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with growth rate in GaAs deposition and either increase or remain constant with the V/III ratio for both GaAs and Ga0.5ln0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga0.5ln0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model explains the increase in zinc incorporation with both the growth rate and the V/III ratio.


ConferenceLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 1992 IEEE.

NREL Publication Number

  • NREL/CP-451-4725


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