Model for Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P

Sarah R. Kurtz; J. M. Olson; A. E. Kibbler; S. Asher

doi:10.1109/ICIPRM.1992.235665

Model for Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P

Sarah R. Kurtz, J. M. Olson, A. E. Kibbler, S. Asher

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

Data are presented for the Zn doping of Ga_0.5ln_0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with growth rate in GaAs deposition and either increase or remain constant with the V/III ratio for both GaAs and Ga_0.5ln_0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga_0.5ln_0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model explains the increase in zinc incorporation with both the growth rate and the V/III ratio.

Original language	American English
Pages	109-112
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.1992.235665
State	Published - 1992
Event	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 - Newport, United States Duration: 21 Apr 1992 → 24 Apr 1992

Conference

Conference	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
Country/Territory	United States
City	Newport
Period	21/04/92 → 24/04/92

Bibliographical note

Publisher Copyright:
© 1992 IEEE.

NREL Publication Number

NREL/CP-451-4725

Access to Document

10.1109/ICIPRM.1992.235665

Cite this

Kurtz, S. R., Olson, J. M., Kibbler, A. E., & Asher, S. (1992). Model for Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P. 109-112. Paper presented at LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992, Newport, United States. https://doi.org/10.1109/ICIPRM.1992.235665

Kurtz, Sarah R. ; Olson, J. M. ; Kibbler, A. E. et al. / Model for Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P. Paper presented at LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992, Newport, United States.4 p.

@conference{13344b32761346d18c112972c963902e,

title = "Model for Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P",

abstract = "Data are presented for the Zn doping of Ga0.5ln0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with growth rate in GaAs deposition and either increase or remain constant with the V/III ratio for both GaAs and Ga0.5ln0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga0.5ln0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model explains the increase in zinc incorporation with both the growth rate and the V/III ratio.",

author = "Kurtz, {Sarah R.} and Olson, {J. M.} and Kibbler, {A. E.} and S. Asher",

note = "Publisher Copyright: {\textcopyright} 1992 IEEE.; LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 ; Conference date: 21-04-1992 Through 24-04-1992",

year = "1992",

doi = "10.1109/ICIPRM.1992.235665",

language = "American English",

pages = "109--112",

}

Kurtz, SR, Olson, JM, Kibbler, AE & Asher, S 1992, 'Model for Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P', Paper presented at LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992, Newport, United States, 21/04/92 - 24/04/92 pp. 109-112. https://doi.org/10.1109/ICIPRM.1992.235665

Model for Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P. / Kurtz, Sarah R.; Olson, J. M.; Kibbler, A. E. et al.
1992. 109-112 Paper presented at LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992, Newport, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Model for Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P

AU - Kurtz, Sarah R.

AU - Olson, J. M.

AU - Kibbler, A. E.

AU - Asher, S.

PY - 1992

Y1 - 1992

N2 - Data are presented for the Zn doping of Ga0.5ln0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with growth rate in GaAs deposition and either increase or remain constant with the V/III ratio for both GaAs and Ga0.5ln0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga0.5ln0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model explains the increase in zinc incorporation with both the growth rate and the V/III ratio.

AB - Data are presented for the Zn doping of Ga0.5ln0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with growth rate in GaAs deposition and either increase or remain constant with the V/III ratio for both GaAs and Ga0.5ln0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga0.5ln0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model explains the increase in zinc incorporation with both the growth rate and the V/III ratio.

UR - http://www.scopus.com/inward/record.url?scp=85068259332&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.1992.235665

DO - 10.1109/ICIPRM.1992.235665

M3 - Paper

AN - SCOPUS:85068259332

SP - 109

EP - 112

T2 - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Y2 - 21 April 1992 through 24 April 1992

ER -

Kurtz SR, Olson JM, Kibbler AE, Asher S. Model for Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P. 1992. Paper presented at LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992, Newport, United States. doi: 10.1109/ICIPRM.1992.235665

Model for Incorporation of Zinc in MOCVD Growth of Ga0.5In0.5P

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this