Modeling and Design of III-V Heterojunction Solar Cells for Enhanced Performance: Article No. 101541

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Abstract

Heterojunctions can increase the efficiency of solar cell devices relative to homojunctions, but there is a large parameter space with significant tradeoffs that must be considered. Here, we present an experimental and computational study of III-V heterojunction solar cells and show how the emitter doping, emitter band gap, and heteroband offsets impact device efficiency. Efficiency is maximized by pushing the junction depletion region into the wider band gap material while minimizing the effects of heteroband offsets through optimized choice of emitter band gap, emitter electron affinity, and/or emitter doping density. We use these results to guide optimization of devices grown by halide vapor phase epitaxy, achieving 27% efficiency in a GaAs/GaInPAs heterojunction device. We also show that heterojunctions yield proportionally larger efficiency improvements in lower-quality materials. Although the modeling was developed and validated using III-V materials, the results are theoretically applicable to materials systems outside III-Vs.
Original languageAmerican English
Number of pages15
JournalCell Reports Physical Science
Volume4
Issue number9
DOIs
StatePublished - 2023

NREL Publication Number

  • NREL/JA-5900-86147

Keywords

  • device modeling
  • device physics
  • heterojunctions
  • hydride vapor phase epitaxy
  • III-V photovoltaics
  • organometallic vapor phase epitaxy
  • PV

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