Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint

    Research output: Contribution to conferencePaper

    Abstract

    An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devicesduring device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.
    Original languageAmerican English
    Number of pages8
    StatePublished - 2008
    Event33rd IEEE Photovoltaic Specialists Conference - San Diego, California
    Duration: 11 May 200816 May 2008

    Conference

    Conference33rd IEEE Photovoltaic Specialists Conference
    CitySan Diego, California
    Period11/05/0816/05/08

    NREL Publication Number

    • NREL/CP-520-42580

    Keywords

    • device processing
    • diffusion flux
    • grain boundary (GBS)
    • migration simulation
    • PV
    • solar cells
    • thin films

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