Abstract
An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devicesduring device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.
Original language | American English |
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Number of pages | 8 |
State | Published - 2008 |
Event | 33rd IEEE Photovoltaic Specialists Conference - San Diego, California Duration: 11 May 2008 → 16 May 2008 |
Conference
Conference | 33rd IEEE Photovoltaic Specialists Conference |
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City | San Diego, California |
Period | 11/05/08 → 16/05/08 |
NREL Publication Number
- NREL/CP-520-42580
Keywords
- device processing
- diffusion flux
- grain boundary (GBS)
- migration simulation
- PV
- solar cells
- thin films