Modeling Cu Migration in CdTe Solar Cells Under Device-Processing and Long-Term Stability Conditions: Preprint

Research output: Contribution to conferencePaper

Abstract

An impurity migration model for systems with material interfaces is applied to Cu migration in CdTe solar cells. In the model, diffusion fluxes are calculated from the Cu chemical potential gradient. Inputs to the model include Cu diffusivities, solubilities, and segregation enthalpies in CdTe, CdS and contact materials. The model yields transient and equilibrium Cu distributions in CdTe devicesduring device processing and under field-deployed conditions. Preliminary results for Cu migration in CdTe photovoltaic devices using available diffusivity and solubility data from the literature show that Cu segregates in the CdS, a phenomenon that is commonly observed in devices after back-contact processing and/or stress conditions.
Original languageAmerican English
Number of pages8
StatePublished - 2008
Event33rd IEEE Photovoltaic Specialists Conference - San Diego, California
Duration: 11 May 200816 May 2008

Conference

Conference33rd IEEE Photovoltaic Specialists Conference
CitySan Diego, California
Period11/05/0816/05/08

NREL Publication Number

  • NREL/CP-520-42580

Keywords

  • device processing
  • diffusion flux
  • grain boundary (GBS)
  • migration simulation
  • PV
  • solar cells
  • thin films

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