Abstract
As energy systems move towards wide-spread electrification, penetration of power semiconductor devices and power electronics continue to grow at a rapid pace. This paper attempts at reviewing the state-of-the-art in power semiconductor modeling and the existing state of modeling in general on the design of devices and systems. The modeling needs for semiconductor devices vary depending on the end-goal, and the level of abstraction needed towards model formulation also changes with the size and complexity of the system to be designed. Finally, key aspects of thermal design and modeling for power electronics are also discussed.
Original language | American English |
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Number of pages | 4 |
DOIs | |
State | Published - Dec 2019 |
Event | 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: 7 Dec 2019 → 11 Dec 2019 |
Conference
Conference | 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 |
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Country/Territory | United States |
City | San Francisco |
Period | 7/12/19 → 11/12/19 |
Bibliographical note
See NREL/CP-5400-74666 for preprintNREL Publication Number
- NREL/CP-5400-76195
Keywords
- gallium oxide
- modeling and simulation
- power electronics
- semiconductor devices
- thermal modeling
- wide band-gap devices