Modeling of Electron Diffusion Length in GaInAsN Solar Cells

Sarah Kurtz, J. F. Geisz, D. J. Friedman, J. M. Olson, A. Duda, N. H. Karam, R. R. King, J. H. Ermer, D. E. Joslin

Research output: Contribution to conferencePaperpeer-review

38 Scopus Citations


This paper seeks to quantify the electron diffusion length in p-type GaInAsN and to understand the performance of GaInAsN cells. The usual modeling is complicated because the electron diffusion length is quite short (often < 0.1 μm) and is usually less than the hole diffusion length. The properties (e.g. absorption and transport) of GaInAsN are both variable and poorly studied, and, because the band gap of GaInAsN is less than the band gap of the substrate, light that is transmitted through the GaInAsN layer may be reflected from the back metallization and make a second pass through the GaInAsN. Layers that are expected to be p-type can sometimes change to n-type, changing the location of the junction and complicating the modeling, but improving the performance of the cell. Internal quantum efficiencies as high as 80% near the GaAs band edge are reported.

Original languageAmerican English
Number of pages4
StatePublished - 2000
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: 15 Sep 200022 Sep 2000


Conference28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2000 IEEE.

NREL Publication Number

  • NREL/CP-520-28879


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