Abstract
Modulated structure in organometallic vapour phase epitaxially grown InPSb(001) layers has been investigated using transmission electron microscopy (TEM) and transmission electron diffraction (TED). TEM results show that a fine scale modulated contrast (15-20nm) and a fine scale speckled contrast (∼5 nm) are simultaneously present. In addition, a fine needle-like contrast (∼1.5-2.1 nm) is present. TED patterns show that (1̄11) and (11̄1) CuPt-type ordered variants are present. Diffuse streaks along the [110] direction are also observed in the [1̄10] TED pattern and found to be associated with the needle-like contrast. A possible model involving segregation of atoms associated with rows of missing dimers in the surface reconstruction or the presence of antiphase boundaries (APBs) and domain boundaries in CuPt-type ordered regions present in the layers is suggested to explain the origin of the needle-like contrast.
Original language | American English |
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Pages (from-to) | 2209-2212 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 47 |
Issue number | 4 |
DOIs | |
State | Published - 2008 |
NREL Publication Number
- NREL/JA-520-43470
Keywords
- Atomic ordering
- Fine scale modulated contrast
- III-V compound semiconductors
- InPSb
- Needle-like contrast
- Organometallic vapor phase epitaxy
- Speckled contrast
- Spinodal decomposition
- Transmission electron microscopy