Molecular Beam Epitaxy of GaAs Templates on Water Soluble NaCl Thin Films: Article No. 126617

Brelon May, Jae Jin Kim, Patrick Walker, Helio Moutinho, William McMahon, Aaron Ptak, David Young

Research output: Contribution to journalArticlepeer-review

3 Scopus Citations

Abstract

Expensive III-V substrates are cost limiting for the adoption of many technologies. Thus, being able to reuse the original substrate is highly desirable. Existing substrate reuse techniques have significant drawbacks, but this work discusses a new method using molecular beam epitaxy deposition of water soluble NaCl thin films on commonly employed (0 0 1) GaAs substrates. Single-crystal GaAs templates are grown on continuous NaCl layers utilizing careful exposure of the NaCl to an in-situ electron beam and a low temperature nucleation layer. The template layers can be quickly removed from the substrate via dissolution of the NaCl. After liftoff, the original wafer shows an increase in rms surface roughness of only 0.2 nm.
Original languageAmerican English
Number of pages7
JournalJournal of Crystal Growth
Volume586
DOIs
StatePublished - 2022

NREL Publication Number

  • NREL/JA-5900-81692

Keywords

  • GaAs
  • III-V
  • MBE
  • molecular beam epitaxy
  • photovoltaic
  • PV
  • substrate reuse

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