Molybdenum-Doped Indium Oxide Deposited by Radio-Frequency Magnetron Sputtering and Pulsed Laser Deposition

Y. Yoshida, C. Warmsingh, T. A. Gessert, D. L. Young, D. M. Wood, J. D. Perkins, D. S. Ginley, T. J. Coutts

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations

Abstract

Thin-films of molybdenum-doped indium oxide (IMO), an n-type transparent conducting oxide, were deposited using radio-frequency (RF) magnetron sputtering and pulsed laser deposition (PLD). To date, sputtered and PLD IMO films have exhibited mobilities as high as 45 and 127 cm2V- 1s-1. Temperature-dependent Hall measurements were done on both sputtered and PLD films to study scattering mechanisms. In addition, four transport coefficient measurements (conductivity, Hall, Nerst, and Seebeck coefficients) were conducted to extract the transport properties of IMO. Temperature-dependent Hall measurements on PLD and sputtered films suggest the mobility is limited by phonon and ionized impurity scattering, respectively. From the method of four coefficients, the density-of-states effective-mass value of IMO was found to increase from ∼0.25me to ∼0.4m eas carrier concentration varied from 3.6×1019 to 6.5×1020 cm-3.

Conference

Conference3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference
CityOsaka, Japan
Period11/05/0318/05/03

NREL Publication Number

  • NREL/CP-520-34051

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