Monitoring of Crystallization and the Effect of the Deposition Rate, Hydrogen Content and Annealing Process on the Crystallization of Hot Wire Chemical Vapor Deposited Hydrogenated Amorphous Silicon (a-Si:H) Films

B. Roy; A. H. Mahan; Q. Wang; R. Reedy; D. W. Readey; D. S. Ginley

doi:10.1016/j.tsf.2008.03.003

Monitoring of Crystallization and the Effect of the Deposition Rate, Hydrogen Content and Annealing Process on the Crystallization of Hot Wire Chemical Vapor Deposited Hydrogenated Amorphous Silicon (a-Si:H) Films

B. Roy, A. H. Mahan, Q. Wang, R. Reedy, D. W. Readey, D. S. Ginley

Materials, Chemical, and Computational Science

Research output: Contribution to journal › Article › peer-review

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Abstract

The crystallization behavior of the a-Si:H films grown by hot wire chemical vapor deposition has been studied using X-ray diffraction (XRD) and reflectance spectroscopy. The surface morphology of the films does not change during annealing. It has been observed that the different deposition rates, hydrogen contents, or annealing processes do not affect the nucleation mechanism or orientation of the films differently. The full width at half maxima of the XRD (111) peak of high deposition rate (~ 100 Å/s) films is observed to decrease when the same completely crystallized films (at 650 °C) are treated at increased temperatures up to 900 °C. Furthermore, films with different hydrogen contents and grown at a lower deposition rate (~ 5 Å/s) showed similar crystal growth activation energies upon rapid thermal annealing.

Original language	American English
Pages (from-to)	6517-6523
Number of pages	7
Journal	Thin Solid Films
Volume	516
Issue number	18
DOIs	https://doi.org/10.1016/j.tsf.2008.03.003 https://doi.org/10.1016/j.tsf.2008.03.003
State	Published - 2008

NREL Publication Number

NREL/JA-520-43770

Keywords

a-Si:H
CTA
Deposition rate
HWCVD
Hydrogen content of films
RTA

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Roy, B., Mahan, A. H., Wang, Q., Reedy, R., Readey, D. W., & Ginley, D. S. (2008). Monitoring of Crystallization and the Effect of the Deposition Rate, Hydrogen Content and Annealing Process on the Crystallization of Hot Wire Chemical Vapor Deposited Hydrogenated Amorphous Silicon (a-Si:H) Films. Thin Solid Films, 516(18), 6517-6523. https://doi.org/10.1016/j.tsf.2008.03.003, https://doi.org/10.1016/j.tsf.2008.03.003

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title = "Monitoring of Crystallization and the Effect of the Deposition Rate, Hydrogen Content and Annealing Process on the Crystallization of Hot Wire Chemical Vapor Deposited Hydrogenated Amorphous Silicon (a-Si:H) Films",

abstract = "The crystallization behavior of the a-Si:H films grown by hot wire chemical vapor deposition has been studied using X-ray diffraction (XRD) and reflectance spectroscopy. The surface morphology of the films does not change during annealing. It has been observed that the different deposition rates, hydrogen contents, or annealing processes do not affect the nucleation mechanism or orientation of the films differently. The full width at half maxima of the XRD (111) peak of high deposition rate (~ 100 {\AA}/s) films is observed to decrease when the same completely crystallized films (at 650 °C) are treated at increased temperatures up to 900 °C. Furthermore, films with different hydrogen contents and grown at a lower deposition rate (~ 5 {\AA}/s) showed similar crystal growth activation energies upon rapid thermal annealing.",

keywords = "a-Si:H, CTA, Deposition rate, HWCVD, Hydrogen content of films, RTA",

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year = "2008",

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Roy, B, Mahan, AH, Wang, Q, Reedy, R, Readey, DW & Ginley, DS 2008, 'Monitoring of Crystallization and the Effect of the Deposition Rate, Hydrogen Content and Annealing Process on the Crystallization of Hot Wire Chemical Vapor Deposited Hydrogenated Amorphous Silicon (a-Si:H) Films', Thin Solid Films, vol. 516, no. 18, pp. 6517-6523. https://doi.org/10.1016/j.tsf.2008.03.003, https://doi.org/10.1016/j.tsf.2008.03.003

Monitoring of Crystallization and the Effect of the Deposition Rate, Hydrogen Content and Annealing Process on the Crystallization of Hot Wire Chemical Vapor Deposited Hydrogenated Amorphous Silicon (a-Si:H) Films. / Roy, B.; Mahan, A. H.; Wang, Q. et al.
In: Thin Solid Films, Vol. 516, No. 18, 2008, p. 6517-6523.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Monitoring of Crystallization and the Effect of the Deposition Rate, Hydrogen Content and Annealing Process on the Crystallization of Hot Wire Chemical Vapor Deposited Hydrogenated Amorphous Silicon (a-Si:H) Films

AU - Roy, B.

AU - Mahan, A. H.

AU - Wang, Q.

AU - Reedy, R.

AU - Readey, D. W.

AU - Ginley, D. S.

PY - 2008

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N2 - The crystallization behavior of the a-Si:H films grown by hot wire chemical vapor deposition has been studied using X-ray diffraction (XRD) and reflectance spectroscopy. The surface morphology of the films does not change during annealing. It has been observed that the different deposition rates, hydrogen contents, or annealing processes do not affect the nucleation mechanism or orientation of the films differently. The full width at half maxima of the XRD (111) peak of high deposition rate (~ 100 Å/s) films is observed to decrease when the same completely crystallized films (at 650 °C) are treated at increased temperatures up to 900 °C. Furthermore, films with different hydrogen contents and grown at a lower deposition rate (~ 5 Å/s) showed similar crystal growth activation energies upon rapid thermal annealing.

AB - The crystallization behavior of the a-Si:H films grown by hot wire chemical vapor deposition has been studied using X-ray diffraction (XRD) and reflectance spectroscopy. The surface morphology of the films does not change during annealing. It has been observed that the different deposition rates, hydrogen contents, or annealing processes do not affect the nucleation mechanism or orientation of the films differently. The full width at half maxima of the XRD (111) peak of high deposition rate (~ 100 Å/s) films is observed to decrease when the same completely crystallized films (at 650 °C) are treated at increased temperatures up to 900 °C. Furthermore, films with different hydrogen contents and grown at a lower deposition rate (~ 5 Å/s) showed similar crystal growth activation energies upon rapid thermal annealing.

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KW - Deposition rate

KW - HWCVD

KW - Hydrogen content of films

KW - RTA

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Roy B, Mahan AH, Wang Q, Reedy R, Readey DW, Ginley DS. Monitoring of Crystallization and the Effect of the Deposition Rate, Hydrogen Content and Annealing Process on the Crystallization of Hot Wire Chemical Vapor Deposited Hydrogenated Amorphous Silicon (a-Si:H) Films. Thin Solid Films. 2008;516(18):6517-6523. doi: 10.1016/j.tsf.2008.03.003, 10.1016/j.tsf.2008.03.003

Monitoring of Crystallization and the Effect of the Deposition Rate, Hydrogen Content and Annealing Process on the Crystallization of Hot Wire Chemical Vapor Deposited Hydrogenated Amorphous Silicon (a-Si:H) Films

Abstract

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Keywords

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