Monitoring the Recovery of c-Si Modules from Potential-Induced Degradation Using Suns-Voc Curves

Peter Hacke; Kent Terwilliger; Harrison Wilterdink; Ronald Sinton; Jeyna Meydbray

doi:10.1109/PVSC.2016.7750152

Monitoring the Recovery of c-Si Modules from Potential-Induced Degradation Using Suns-Voc Curves

Peter Hacke, Kent Terwilliger, Harrison Wilterdink, Ronald Sinton, Jeyna Meydbray

Materials Science

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Potential-induced degradation (PID) has recently been shown as an important failure mode in c-Si modules. We demonstrate the utility of Suns-V_oc analysis for measuring shunt effects caused by PID at the module level. Our results show an expected positive correlation between module shunt resistance and power during recovery from the degraded state.

Original language	American English
Pages	2752-2755
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2016.7750152 https://doi.org/10.1109/PVSC.2016.7750152
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

NREL/CP-5J00-65811

Keywords

module powers
PID
potential-induced degradation
shunt resistance
Suns-Voc analysis

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Hacke, P., Terwilliger, K., Wilterdink, H., Sinton, R., & Meydbray, J. (2016). Monitoring the Recovery of c-Si Modules from Potential-Induced Degradation Using Suns-Voc Curves. 2752-2755. Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States. https://doi.org/10.1109/PVSC.2016.7750152, https://doi.org/10.1109/PVSC.2016.7750152

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Hacke, P , Terwilliger, K, Wilterdink, H, Sinton, R & Meydbray, J 2016, 'Monitoring the Recovery of c-Si Modules from Potential-Induced Degradation Using Suns-Voc Curves', Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16 - 10/06/16 pp. 2752-2755. https://doi.org/10.1109/PVSC.2016.7750152, https://doi.org/10.1109/PVSC.2016.7750152

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AU - Sinton, Ronald

AU - Meydbray, Jeyna

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AB - Potential-induced degradation (PID) has recently been shown as an important failure mode in c-Si modules. We demonstrate the utility of Suns-Voc analysis for measuring shunt effects caused by PID at the module level. Our results show an expected positive correlation between module shunt resistance and power during recovery from the degraded state.

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Monitoring the Recovery of c-Si Modules from Potential-Induced Degradation Using Suns-Voc Curves

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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